MOSFET transistor MASPOWER MSN4688 offering versatile drive capabilities for power systems
Key Attributes
Model Number:
MSN4688
Product Custom Attributes
Drain To Source Voltage:
60V;45V
Current - Continuous Drain(Id):
5A;3.5A
RDS(on):
55mΩ@4.5V;100mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
45pF;50pF
Number:
1 N-channel
Output Capacitance(Coss):
70pF
Input Capacitance(Ciss):
915pF;1.05nF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
19nC@10V;22nC@10V
Mfr. Part #:
MSN4688
Package:
SOP-8
Product Description
Product Overview
The MSN4688 is a high-performance MOSFET offering low on-resistance and versatile 4.5V/-4.5V drive capabilities. Designed for efficiency and reliability, it is RoHS compliant and suitable for demanding power management applications.
Product Attributes
- Brand: Maspower
- Model: MSN4688 H1.02
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Conditions | N-Ch | P-Ch | Unit |
| Absolute Maximum Ratings | |||||
| Drain-to-Source Voltage | VDSS | Tc = 25C | 60 | -45 | V |
| Gate-to-Source Voltage | VGSS | Tc = 25C | 25 | 25 | V |
| Drain Current (DC) | ID | Tc = 25C | 5 | -3.5 | A |
| Drain Current (Pulse) | IDP | PW 10S, duty cycle 1 | 20 | -14 | A |
| Allowable Power Dissipation | PD | Mounted on a ceramic board (1000mm2 0.8mm) 1unit | 1.3 | W | |
| Total Dissipation | PT | Mounted on a ceramic board (1000mm2 0.8mm) | 1.7 | W | |
| Maximum Junction Temperature | Tch | 150 | |||
| Storage Temperature | Tstg | Storage Temperature Range | -55~+150 | ||
| Electrical Characteristics | |||||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | ID = 250A, VGS = 0V | 60 | -45 | V |
| Zero-Gate Voltage Drain Current | IDSS | VDS = 48V, VGS = 0V | 1 | -1 | A |
| Gate-to-Source Leakage Current | IGSS | VGS = +25V, VDS = 0V | 100 | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1 ~ 2.5 | -1 ~ -2.5 | V |
| Static Drain-to-Source On-State Resistance | RDS(ON) | ID = 5A, VGS = 10V | - | 100 | m |
| ID = -3.5A, VGS = -10V | 80 | 100 | m | ||
| Static Drain-to-Source On-State Resistance | RDS(ON) | ID = 4A, VGS = 4.5V | 55 ~ 75 | 100 ~ 135 | m |
| ID = -3.1A, VGS = -4.5V | m | ||||
| Input Capacitance | CISS | VDS = 30V, VGS = 0V, f = 1MHz | 915 | 1050 | pF |
| Output Capacitance | COSS | VDS = 30V, VGS = 0V, f = 1MHz | 70 | 70 | pF |
| Reverse Transfer Capacitance | CRSS | VDS = 30V, VGS = 0V, f = 1MHz | 45 | 50 | pF |
| Turn-on Delay Time | td(on) | VGEN = 10V, VDS = 30V, RL = 30, ID = 1A, RGEN = 6 | 9 ~ 17 | 7 ~ 14 | nS |
| VGEN = -10V, VDS = -22.5V, RL = 30, ID = -1A, RGEN = 6 | nS | ||||
| Rise Time | tr | 6 ~ 12 | 8 ~ 15 | nS | |
| nS | |||||
| Turn-off Delay Time | td(off) | 25 ~ 46 | 47 ~ 86 | nS | |
| nS | |||||
| Fall Time | tf | 5 ~ 10 | 17 ~ 32 | nS | |
| nS | |||||
| Total Gate Charge | Qg | VDS = 30V, VGS = 10V, ID = 5A | 19 ~ 27 | 22 ~ 31 | nC |
| VDS = -22.5V, VGS = -10V, | nC | ||||
| Gate-to-Source Charge | Qgs | 4.4 | 2.8 | - | |
| Gate-to-Drain Miller Charge | Qgd | 4.4 | 5 | - | |
| Diode Forward Voltage | VSD | IS = 2.5A, VGS = 0 | 0.8 ~ 1.1 | V | |
| IS = -2.5A, VGS = 0 | -0.8 ~ -1.1 | V | |||
2411271642_MASPOWER-MSN4688_C5353690.pdf
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