High Current MASPOWER MS50N100HGF4 MOSFET with 1000V Drain Source Voltage and Avalanche Rated Design
Key Attributes
Model Number:
MS50N100HGF4
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
50A
RDS(on):
210mΩ@10V,1A
Operating Temperature -:
-55℃~+150℃
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 N-channel
Output Capacitance(Coss):
1nF
Input Capacitance(Ciss):
13nF@25V
Pd - Power Dissipation:
900W
Gate Charge(Qg):
260nC@10V
Mfr. Part #:
MS50N100HGF4
Package:
SOT-227
Product Description
Product Overview
The MS50N100HGF4 H1.03 Maspower is an N-Channel MOSFET featuring low RDS(on) and high current handling capability. It includes a fast intrinsic diode and is avalanche rated, making it suitable for various power conversion applications. Its key advantages include efficient operation and robust performance.
Product Attributes
- Brand: Maspower
- Model: MS50N100HGF4 H1.03
Technical Specifications
| Parameter | Symbol | Tests conditions | Min | Type | Max | Unit |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | 1000 | V | |||
| Drain Current -continuous | ID | 50 | A | |||
| Drain Current - pulse* | IDM | 110 | A | |||
| Gate-Source Voltage | VGSS | 30 | V | |||
| Single Pulsed Avalanche Energy | EAS | 4 | J | |||
| Power Dissipation | PD | 900 | W | |||
| Operating and Storage Temperature Range | Tj,TSTG | -55 | +150 | |||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ||||
| Off-Characteristics | ||||||
| Drain-Source Voltage | BVDSS | ID=250uA,VGS=0V | 1000 | - | - | V |
| Drain cut-off current | IDSS | VDS=1000,VGS=0V | - | - | 50 | A |
| Gate-body leakage current,forward | IGSSF | VDS=0V,VGS=30V | - | - | 200 | nA |
| Gate-body leakage current,reverse | IGSSR | VDS=0V,VGS=-30V | - | - | -200 | nA |
| On-Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250uA | 3.5 | - | 6.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=25A (note1) | - | 220 | - | m |
| Forward transconductance | Gfs | VDS=20V,ID=25A (note1) | - | 40 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | - | 13 | - | nF |
| Output capacitance | Coss | - | 1000 | - | pF | |
| Reverse transfer capacitance | Crss | - | 85 | - | pF | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDD=500V,ID=25A Rg=0.5 | - | 50 | - | ns |
| Turn-On rise time | tr | - | 30 | - | ns | |
| Turn-Off delay time | Td(off) | - | 65 | - | ns | |
| Turn-Off Fall time | tf | - | 25 | - | ns | |
| Total Gate Charge | Qg | VDD=500V,ID=25A VGS=10V | - | 260 | - | nC |
| Gate-Source charge | Qgs | - | 75 | - | nC | |
| Gate-Drain charge | Qgd | - | 113 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Drain-Source Diode Forward Voltage | VSD | VGS=0V,IS=30A, (note1) | - | 0.84 | 1.2 | V |
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | 50 | - | A | |
| Reverse recovery time | trr | IF=20A dIF/dt=-100A/us VR=100V | - | 300 | - | ns |
| Reverse recovery charge | Qrr | - | 2 | - | uC | |
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.138 | /W | |||
2411261924_MASPOWER-MS50N100HGF4_C7424093.pdf
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