Power MOSFET MASPOWER MS18N100HCC0 featuring 1000V drain source voltage and low gate charge for lighting
Key Attributes
Model Number:
MS18N100HCC0
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
18A
RDS(on):
370mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
13pF
Pd - Power Dissipation:
312W
Output Capacitance(Coss):
90pF
Input Capacitance(Ciss):
1.8nF
Gate Charge(Qg):
28nC@10V
Mfr. Part #:
MS18N100HCC0
Package:
TO-247
Product Description
Product Overview
The MS18N100HCC0 is a high-performance power MOSFET designed for high-efficiency applications. It features a VDS of 1000V and an ID of 18A, with low Crss, low gate charge, and improved dv/dt capability, making it ideal for demanding power supply and lighting applications.
Product Attributes
- Brand: Maspower
- Model: MS18N100HCC0
Technical Specifications
| Parameter | Symbol | Tests conditions | Min | Type | Max | Unit |
| Absolute Ratings | ||||||
| Drain-Source Voltage | VDSS | 1000 | V | |||
| Transient Gate-Source Voltage | VGSM | ±30 | V | |||
| Continuous Gate-Source Voltage | VGSS | ±20 | V | |||
| Drain Current-continuous | ID | TC=25 | 18 | A | ||
| Drain Current-continuous | ID | TC=100 | 12 | A | ||
| Drain Current-pulse(note1) | IDM | 72 | A | |||
| Repetitive Avalanche Current | IAR | 11 | A | |||
| Single Pulsed Avalanche Energy (note2) | EAS | 605 | mJ | |||
| Maximum Power Dissipation | PD | TC=25 | 312 | W | ||
| Maximum Power Dissipation | PD | TC=100 | 125 | W | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55~+150 | ||||
| Soldering temperature, wave soldering only allowed at leads.(1.6mm for 10s) | TL | 260 | ||||
| Electrical Characteristics (TCASE=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=250A,VGS=0V | 1000 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=VDSS, VGS=0V, Tc=25 | - | - | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS=VDSS, VGS=0V, Tc=125 | - | - | 100 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 3 | 4 | 5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V,ID=10A (note3) | - | 0.37 | 0.50 | Ω |
| Forward Transconductance | gfs | VDS=40V,ID=10A (note3) | - | 20 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz (note4) | - | 1800 | - | pF |
| Output capacitance | Coss | - | 90 | - | pF | |
| Reverse transfer capacitance | Crss | - | 13 | - | pF | |
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | VDS=500V,ID=18A, VGS=10V,RG=25Ω | - | 30 | - | ns |
| Turn-On rise time | tr | - | 28 | - | ns | |
| Turn-Off delay time | td(Off) | - | 80 | - | ns | |
| Turn-Off rise time | tf | - | 20 | - | ns | |
| Total Gate Charge | Qg | VDS=500V,ID=18A, VGS=10V(note4) | - | 28 | - | nC |
| Gate-Source charge | Qgs | - | 6 | - | nC | |
| Gate-Drain charge | Qg d | - | 14 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Continuous Drain-Source Diode Forward Voltage | VSD | VGS=0V,IS=1A(note3) | - | 0.72 | 1.2 | V |
| Diode Forward Current | IS | - | - | 18 | A | |
| Reverse recovery time | Trr | IS=18A,diF/dt=100A/μs VR=100V,VGS=0V | - | 360 | - | ns |
| Reverse recovery charge | Qrr | - | 3245 | - | nC | |
| Reverse recovery current | Irr | - | 16 | - | A | |
| Thermal Characteristics | ||||||
| Thermal Resistance,junction to Case | Rth(j-C) | 0.4 | °C/W | |||
| Thermal Resistance,junction to Ambient | Rth(j-A) | 40 | °C/W | |||
| Order Information | ||||||
| Order codes | Package | Packaging | ||||
| MS18N100HCC0 | TO-247 | Tube | ||||
2508261540_MASPOWER-MS18N100HCC0_C50726503.pdf
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