Microchip tc6320k6 g complementary n channel and p channel mosfet pair designed for high voltage pulser
Key Attributes
Model Number:
TC6320K6-G
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
2A
RDS(on):
7Ω@10V;8Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF;30pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
60pF;55pF
Input Capacitance(Ciss):
110pF;200pF
Mfr. Part #:
TC6320K6-G
Package:
DFN-8-EP(4x4)
Product Description
TC6320 N-Channel and P-Channel Enhancement-Mode MOSFET Pair
The TC6320 is a complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pair designed for high-voltage pulser applications. It utilizes an advanced vertical DMOS structure and a proven silicon gate manufacturing process, offering the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally induced secondary breakdown. The TC6320 features integrated gate-to-source resistors and gate-to-source Zener diode clamps, low threshold voltage, low on-resistance, low input capacitance, and fast switching speeds. It is ideally suited for applications requiring very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds.
Product Attributes
- Brand: Microchip Technology Inc.
- Origin: Derived from Supertex Doc# DSFP-TC6320
Technical Specifications
| Parameter | Symbol | N-Channel Min. | N-Channel Typ. | N-Channel Max. | N-Channel Unit | N-Channel Conditions | P-Channel Min. | P-Channel Typ. | P-Channel Max. | P-Channel Unit | P-Channel Conditions |
| Drain-to-source Breakdown Voltage | BVDSS | 200 | V | VGS = 0V, ID = 2 mA | 200 | V | VGS = 0V, ID = 2 mA | ||||
| Gate Threshold Voltage | VGS(th) | 1 | 2 | V | VGS = VDS, ID = 1 mA | 1 | 2.4 | V | VGS = VDS, ID = 1 mA | ||
| Gate-to-source Shunt Resistor | RGS | 10 | 50 | k | IGS = 100 A | 10 | 50 | k | IGS = 100 A | ||
| Gate-to-Source Zener Voltage | VZGS | 13.2 | 25 | V | IGS = 2 mA | 13.2 | 25 | V | IGS = 2 mA | ||
| Zero-gate Voltage Drain Current | IDSS | 10 | A | VDS = Maximum rating, VGS = 0V | 10 | A | VDS = Maximum rating, VGS = 0V | ||||
| On-state Drain Current | ID(ON) | 1 | A | VGS = 4.5V, VDS = 25V | 1 | A | VGS = 4.5V, VDS = 25V | ||||
| Static Drain-to-source On-state Resistance | RDS(ON) | 8 | VGS = 4.5V, ID = 150 mA | 10 | VGS = 4.5V, ID = 150 mA | ||||||
| Forward Transconductance | GFS | 400 | mmho | VDS = 25V, ID = 500 mA | 400 | mmho | VDS = 25V, ID = 500 mA | ||||
| Input Capacitance | CISS | 110 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | 200 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | ||||
| Common Source Output Capacitance | COSS | 60 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | 55 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | ||||
| Reverse Transfer Capacitance | CRSS | 23 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | 30 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | ||||
| Turn-on Delay Time | td(ON) | 10 | ns | VDD = 25V, ID = 1A, RGEN = 25 | 10 | ns | VDD = 25V, ID = 1A, RGEN = 25 | ||||
| Rise Time | tr | 15 | ns | VDD = 25V, ID = 1A, RGEN = 25 | 15 | ns | VDD = 25V, ID = 1A, RGEN = 25 | ||||
| Turn-off Delay Time | td(OFF) | 20 | ns | VDD = 25V, ID = 1A, RGEN = 25 | 20 | ns | VDD = 25V, ID = 1A, RGEN = 25 | ||||
| Fall Time | tf | 15 | ns | VDD = 25V, ID = 1A, RGEN = 25 | 15 | ns | VDD = 25V, ID = 1A, RGEN = 25 | ||||
| Diode Forward Voltage Drop | VSD | 1.8 | V | VGS = 0V, ISD = 500 mA | 1.8 | V | VGS = 0V, ISD = 500 mA | ||||
| Reverse Recovery Time | trr | 300 | ns | VGS = 0V, ISD = 500 mA | 300 | ns | VGS = 0V, ISD = 500 mA | ||||
| Operating Ambient Temperature | TA | 55 | +150 | C | Unless otherwise specified | 55 | +150 | C | Unless otherwise specified | ||
| Storage Temperature | TS | 55 | +150 | C | Unless otherwise specified | 55 | +150 | C | Unless otherwise specified | ||
| Package Thermal Resistance (8-lead DFN) | JA | 44 | C/W | Note 1 | 44 | C/W | Note 1 | ||||
| Package Thermal Resistance (8-lead SOIC) | JA | 101 | C/W | Note 1 | 101 | C/W | Note 1 |
Note 1: 1 oz., four-layer, 3 x 4 PCB
2410121718_MICROCHIP-TC6320K6-G_C624991.pdf
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