N Channel MOSFET MATSUKI ME2614 featuring DMOS trench technology for loss in compact surface mount package
Key Attributes
Model Number:
ME2614
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
213mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
44pF
Number:
1 N-channel
Output Capacitance(Coss):
57pF
Input Capacitance(Ciss):
849pF
Pd - Power Dissipation:
2.9W
Gate Charge(Qg):
19.2nC@10V
Mfr. Part #:
ME2614
Package:
SOT-223-3
Product Description
Product Overview
The ME2614 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface-mount package.
Product Attributes
- Brand: Matsuki Electric/Force mos
- Product Type: N-Channel MOSFET
- Package: SOT-223
- Lead Finish: Pb-free (ME2614), Halogen-free (ME2614-G)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source Voltage | VDS | 100 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (TA=25) | ID | 3.3 | A | *Device mounted on 1in² FR4 board with 2 oz copper |
| Continuous Drain Current (TA=70) | ID | 2.6 | A | *Device mounted on 1in² FR4 board with 2 oz copper |
| Pulsed Drain Current | IDM | 13 | A | |
| Maximum Power Dissipation (TA=25) | PD | 2.9 | W | *Device mounted on 1in² FR4 board with 2 oz copper |
| Maximum Power Dissipation (TA=70) | PD | 1.9 | W | *Device mounted on 1in² FR4 board with 2 oz copper |
| Operating Junction Temperature | TJ | 150 | ||
| Storage Temperature Range | Tstg | -55 to 150 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 42 | /W | *Device mounted on 1in² FR4 board with 2 oz copper |
| Drain-Source Breakdown Voltage (VGS=0V, ID=250μA) | VBR(DSS) | 100 | V | |
| Gate Threshold Voltage (VDS=VGS, ID=250μA) | VGS(th) | 1.0 to 3.0 | V | |
| Gate Leakage Current (VDS=0V, VGS=±20V) | IGSS | ±100 | nA | |
| Zero Gate Voltage Drain Current (VDS=80V, VGS=0V) | IDSS | 1 | μA | |
| Drain-Source On-Resistance (VGS=10V, ID=3A) | RDS(ON) | 140 to 166 | mΩ | a. Pulse test: pulse width≤300μs, duty cycle≤2% |
| Drain-Source On-Resistance (VGS=4.5V, ID=2.4A) | RDS(ON) | 165 to 213 | mΩ | a. Pulse test: pulse width≤300μs, duty cycle≤2% |
| Diode Forward Voltage (IS=2.5A, VGS=0V) | VSD | 0.8 to 1.2 | V | |
| Total Gate Charge (VDS=80V, VGS=10V, ID=2.5A) | Qg | 19.2 | nC | |
| Total Gate Charge (VDS=80V, VGS=4.5V, ID=2.5A) | Qg | 11.2 | nC | |
| Gate-Source Charge | Qgs | 3.4 | nC | |
| Gate-Drain Charge | Qgd | 6.1 | nC | |
| Input Capacitance (VDS=15V, VGS=0V, f=1.0MHz) | Ciss | 849 | pF | |
| Output Capacitance | Coss | 57 | pF | |
| Reverse Transfer Capacitance | Crss | 44 | pF | |
| Turn-On Delay Time (VDs=50V, RL =10Ω, VGs=10V, RG=6Ω, ID=5A) | td(on) | 12.6 | ns | |
| Turn-On Rise Time | tr | 6 | ns | |
| Turn-Off Delay Time | td(off) | 32.5 | ns | |
| Turn-Off Fall Time | tf | 4.3 | ns |
2409291234_MATSUKI-ME2614_C2841352.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
