MATSUKI ME3920 G Dual N Channel Logic Enhancement Mode Power Transistor for Low Voltage Applications
Key Attributes
Model Number:
ME3920-G
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.6A
RDS(on):
46mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
37pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
375pF@15V
Pd - Power Dissipation:
1.7W
Gate Charge(Qg):
10.9nC@10V
Mfr. Part #:
ME3920-G
Package:
TSOP-6
Product Description
Product Overview
The ME3920-G is a Dual N-Channel logic enhancement mode power field effect transistor featuring high cell density DMOS trench technology. This advanced process minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones, notebook computers, and other battery-powered circuits. Its design prioritizes low in-line power loss within a very small outline surface mount package.
Product Attributes
- Brand: Matsuki Electric/ Force mos
- Product Code: ME3920-G
- Certifications: Green product-Halogen free
- Package Type: TSOP-6
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250A |
| Gate Threshold Voltage | VGS(th) | 1 - 3 | V | VDS=VGS, ID=250A |
| Gate-Body Leakage Current | IGSS | ±100 | nA | VDS=0V, VGS=±20V |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V |
| Drain-Source On-Resistance | RDS(ON) | 20 - 24 | mΩ | VGS=10V, ID=6.9A |
| 35 - 46 | mΩ | VGS=4.5V, ID=5.8A | ||
| Diode Forward Voltage | VSD | 0.8 - 1.2 | V | IS=1.7A, VGS=0V |
| Total Gate Charge | Qg | 10.9 | nC | VDS=15V, VGS=10V, ID=4A |
| Total Gate Charge | Qg | 5.3 | nC | VDS=15V, VGS=4.5V, ID=4A |
| Gate-Source Charge | Qgs | 3.4 | nC | |
| Gate-Drain Charge | Qgd | 2.4 | nC | |
| Input Capacitance | Ciss | 375 | pF | VDS=15V, VGS=0V, f=1MHZ |
| Output Capacitance | Coss | 54 | pF | |
| Reverse Transfer Capacitance | Crss | 37 | pF | |
| Turn-On Delay Time | td(on) | 8.1 | ns | VDS=15V, RL =3.75Ω, VGS=10V, RG=6Ω, ID=4A |
| Rise Time | tr | 30.8 | ns | |
| Turn-Off Delay Time | td(off) | 18.1 | ns | |
| Fall Time | tf | 11 | ns | |
| Continuous Drain Current (Tj=150) | ID | 6.6 | A | TA=25 |
| Continuous Drain Current | ID | 5.3 | A | TA=70 |
| Pulsed Drain Current | IDM | 27 | A | |
| Maximum Power Dissipation | PD | 1.7 | W | TA=25 |
| 1.1 | W | TA=70 | ||
| Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | ||
| Thermal Resistance-Junction to Ambient* | RθJA | 74 | /W | *The device mounted on 1in² FR4 board with 2 oz copper |
2410121457_MATSUKI-ME3920-G_C3647159.pdf
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