MCC SI2301 TP P Channel Enhancement Mode Transistor with Low RDS ON and Moisture Sensitivity Level 1

Key Attributes
Model Number: SI2301-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
120mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
1V
Number:
1 P-Channel
Input Capacitance(Ciss):
880pF@6V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
14.5nC@4.5V
Mfr. Part #:
SI2301-TP
Package:
SOT-23
Product Description

Product Overview

The SI2301 is a P-Channel Enhancement Mode Field Effect Transistor designed for high-performance applications. It features a high-density cell design for extremely low RDS(ON), ensuring ruggedness and reliability with high-speed switching capabilities. This transistor is available in a SOT-23 package.

Product Attributes

  • Brand: Micro Commercial Components (MCC)
  • Package: SOT-23
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Halogen Free: Available upon request by adding suffix "-HF"

Technical Specifications

Symbol Parameter Rating Unit Test Condition Min Typ Max
Key Features
Drain-Source Voltage -20 V
Drain Current-Continuous -2.8 A
RDS(ON) Static Drain-Source On-Resistance 120 m VGS = -4.5V
RDS(ON) Static Drain-Source On-Resistance 150 m VGS = -2.5V
Maximum Ratings
VDS Drain-source Voltage -20 V @ 25OC Unless Otherwise Specified
ID Drain Current-Continuous -2.8 A @ 25OC Unless Otherwise Specified
IDM Drain Current-Pulsed -10 A @ 25OC Unless Otherwise Specified
VGS Gate-source Voltage 8 V @ 25OC Unless Otherwise Specified
PD Total Power Dissipation 1.25 W @ 25OC Unless Otherwise Specified
RJA Thermal Resistance Junction to Ambient 100 /W Surface Mounted on FR4 Board, t < 5 sec
TJ Operating Junction Temperature -55 to +150
TSTG Storage Temperature -55 to +150
Electrical Characteristics
BVDSS Drain-Source Breakdown Voltage -20 V VGS = 0V, ID = -250A
IDSS Zero Gate Voltage Drain Current -1 A VDS = -20V, VGS = 0V -100
IGSSR Gate Body Leakage Current, Reverse -100 nA VGS = -8V, VDS = 0V
IGSSF Gate Body Leakage Current, Forward 80 nA VGS = 8V, VDS = 0V
VGS(th) Gate Threshold Voltage -0.45 V VGS = VDS, ID = -250A -0.75 -1.2
RDS(on) Static Drain-Source On-Resistance 120 m VGS = -4.5V, ID = -2.8A
RDS(on) Static Drain-Source On-Resistance 150 m VGS = -2.5V, ID = -2.0A
gFS Forward Transconductance 8 S VDS = -5V, ID = -2.8A
Ciss Input Capacitance 1200 pF VDS = -6V, ID = -1A, VGS = -4.5V, RGEN = 6
Coss Output Capacitance 270 pF VDS = -6V, ID = -2.8A, VGS = -4.5V
Crss Reverse Transfer Capacitance 175 pF VDS = -6V, VGS = 0V, f = 1.0 MHz
td(on) Turn-On Delay Time 11 ns VDD = -6V, ID = -2.8A, VGS = -4.5V
tr Turn-On Rise Time 5 ns VDD = -6V, ID = -2.8A, VGS = -4.5V
td(off) Turn-Off Delay Time 32 ns VDD = -6V, ID = -2.8A, VGS = -4.5V
tf Turn-Off Fall Time 23 ns VDD = -6V, ID = -2.8A, VGS = -4.5V
Qg Total Gate Charge 10 nC VDS = -6V, ID = -2.8A, VGS = -4.5V
Qgs Gate-Source Charge 6 nC VDS = -6V, ID = -2.8A, VGS = -4.5V
Qgd Gate-Drain Charge 4 nC VDS = -6V, ID = -2.8A, VGS = -4.5V
IS Drain-Source Diode Forward Current -0.75 A VGS = 0V, IS = -0.75A
VSD Drain-Source Diode Forward Voltage -1.2 V VGS = 0V, IS = -0.75A
Ciss Input Capacitance 1200 pF VDS = -6V, VGS = 0V, f = 1.0 MHz
Coss Output Capacitance 270 pF VDS = -6V, VGS = 0V, f = 1.0 MHz
Crss Reverse Transfer Capacitance 175 pF VDS = -6V, VGS = 0V, f = 1.0 MHz

Ordering Information:

  • Part Number-TP (Tape & Reel: 3Kpcs/Reel)
  • Add "-HF" suffix for Halogen Free option.

Note: Micro Commercial Components (MCC) reserves the right to make changes to products without further notice. MCC does not assume liability for the application or use of any product described herein. Users assume all risks and agree to hold MCC harmless against all damages. MCC products are not authorized for use in life support devices or systems without express written approval.


2410121610_MCC-SI2301-TP_C77976.pdf

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