Enhancement mode transistor MICROCHIP TC2320TG-G with low threshold voltage and high input impedance
Key Attributes
Model Number:
TC2320TG-G
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
1.2A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
7Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
600mV
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF;35pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
60pF;85pF
Input Capacitance(Ciss):
110pF@25V
Mfr. Part #:
TC2320TG-G
Package:
SOIC-8
Product Description
Product Overview
The TC2320 is a high-voltage, low-threshold N-channel and P-channel MOSFET in an 8-Lead SOIC package. This enhancement-mode (normally-off) transistor utilizes an advanced vertical DMOS structure and a proven silicon gate manufacturing process, offering the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. It is free from thermal runaway and thermally induced secondary breakdown, making it ideal for switching and amplifying applications requiring very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds.
Product Attributes
- Brand: Microchip Technology Inc.
- Package Type: 8-lead SOIC
- Certifications: Pb-free JEDEC designator for Matte Tin (Sn)
Technical Specifications
| Parameter | N-Channel Min. | N-Channel Typ. | N-Channel Max. | N-Channel Unit | N-Channel Conditions | P-Channel Min. | P-Channel Typ. | P-Channel Max. | P-Channel Unit | P-Channel Conditions |
| Drain-to-Source Breakdown Voltage (BVDSS) | 200 | V | VGS = 0V, ID = 100 A | 200 | V | VGS = 0V, ID = 2 mA | ||||
| Gate Threshold Voltage (VGS(th)) | 0.6 | 2 | V | VGS = VDS, ID = 1 mA | 1 | 2.4 | V | VGS = VDS, ID = 1 mA | ||
| Zero-Gate Voltage Drain Current (IDSS) | 1 | A | VGS = 0V, VDS = 100V | 10 | A | VGS = 0V, VDS = Maximum rating | ||||
| On-State Drain Current (ID(ON)) | 0.6 | A | VGS = 4.5V, VDS = 25V | 0.25 | 0.7 | A | VGS = 4.5V, VDS = 25V | |||
| Static Drain-to-Source On-State Resistance (RDS(ON)) | 8 | VGS = 4.5V, ID = 150 mA | 10 | 15 | VGS = 4.5V, ID = 100 mA | |||||
| Input Capacitance (CISS) | 110 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | 75 | 125 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |||
| Common Source Output Capacitance (COSS) | 60 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | 20 | 85 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |||
| Reverse Transfer Capacitance (CRSS) | 23 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | 10 | 35 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |||
| Turn-On Delay Time (td(ON)) | 20 | ns | VDD = 25V, ID = 150 mA, RGEN = 25 | 10 | ns | VDD = 25V, ID = 0.75A, RGEN = 25 | ||||
| Rise Time (tr) | 15 | ns | VDD = 25V, ID = 150 mA, RGEN = 25 | 15 | ns | VDD = 25V, ID = 0.75A, RGEN = 25 | ||||
| Turn-Off Delay Time (td(OFF)) | 25 | ns | VDD = 25V, ID = 150 mA, RGEN = 25 | 20 | ns | VDD = 25V, ID = 0.75A, RGEN = 25 | ||||
| Fall Time (tf) | 25 | ns | VDD = 25V, ID = 150 mA, RGEN = 25 | 15 | ns | VDD = 25V, ID = 0.75A, RGEN = 25 | ||||
| Diode Forward Voltage Drop (VSD) | 1.8 | V | VGS = 0V, ISD = 200 mA | 1.8 | V | VGS = 0V, ISD = 0.5A | ||||
| Reverse Recovery Time (trr) | 300 | ns | VGS = 0V, ISD = 200 mA | 300 | ns | VGS = 0V, ISD = 0.5A |
2411220117_MICROCHIP-TC2320TG-G_C624902.pdf
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