P Channel Vertical DMOS FET Microchip TP2520N8 G with Low Input Capacitance and High Switching Speed
Key Attributes
Model Number:
TP2520N8-G
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
12Ω@10V,200mA
Gate Threshold Voltage (Vgs(th)):
2.4V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 P-Channel
Output Capacitance(Coss):
20pF
Input Capacitance(Ciss):
125pF@25V
Pd - Power Dissipation:
1.6W
Mfr. Part #:
TP2520N8-G
Package:
SOT-89-3
Product Description
Product Overview
The TP2520 is a P-Channel Enhancement-Mode Vertical DMOS FET designed for a variety of switching and amplifying applications. It features a low maximum threshold voltage of -2.4V, high input impedance, low input capacitance (125 pF maximum), fast switching speeds, and low on-resistance. This device is free from secondary breakdown and thermal runaway, making it suitable for logic-level interfaces, solid-state relays, battery-operated systems, photovoltaic drives, analog switches, general purpose line drivers, and telecommunication switches.
Product Attributes
- Brand: Microchip Technology Inc.
- Origin: Silicon-gate manufacturing process
- Material: Vertical DMOS structure
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| DC ELECTRICAL CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | 200 | V | VGS = 0V, ID = 2 mA | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.4 | V | VGS = VDS, ID = 1 mA | |
| Change in VGS(th) with Temperature | VGS(th) | 4.5 | mV/C | VGS = VDS, ID = 1 mA (Note 1) | ||
| Gate Body Leakage Current | IGSS | 100 | nA | VGS = 20V, VDS = 0V | ||
| Zero-Gate Voltage Drain Current | IDSS | 10 | A | VGS = 0V, VDS = Maximum rating | ||
| Zero-Gate Voltage Drain Current | IDSS | 1 | mA | VDS = 0.8 Maximum rating, VGS = 0V, TA = 125C (Note 1) | ||
| On-State Drain Current | ID(ON) | 0.25 | 0.7 | A | VGS = 4.5V, VDS = 25V | |
| On-State Drain Current | ID(ON) | 0.75 | 2.1 | A | VGS = 10V, VDS = 25V | |
| Static Drain-to-Source On-State Resistance | RDS(ON) | 10 | 15 | VGS = 4.5V, ID = 100 mA | ||
| Static Drain-to-Source On-State Resistance | RDS(ON) | 8 | 12 | VGS = 10V, ID = 200 mA | ||
| Change in RDS(ON) with Temperature | RDS(ON) | 1.7 | %/C | VGS = 10V, ID = 200 mA (Note 1) | ||
| AC ELECTRICAL CHARACTERISTICS | ||||||
| Forward Transconductance | GFS | 100 | 250 | mmho | VDS = 25V, ID = 200 mA | |
| Input Capacitance | CISS | 75 | 125 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |
| Common Source Output Capacitance | COSS | 20 | 85 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |
| Reverse Transfer Capacitance | CRSS | 10 | 35 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |
| Turn-On Delay Time | td(ON) | 10 | ns | VDD = 25V, ID = 750 mA, RGEN = 25 | ||
| Rise Time | tr | 15 | ns | VDD = 25V, ID = 750 mA, RGEN = 25 | ||
| Turn-Off Delay Time | td(OFF) | 20 | ns | VDD = 25V, ID = 750 mA, RGEN = 25 | ||
| Fall Time | tf | 15 | ns | VDD = 25V, ID = 750 mA, RGEN = 25 | ||
| DIODE PARAMETER | ||||||
| Diode Forward Voltage Drop | VSD | 1.8 | V | VGS = 0V, ISD = 500 mA (Note 1) | ||
| Reverse Recovery Time | trr | 300 | ns | VGS = 0V, ISD = 500 mA (Note 1) | ||
| TEMPERATURE SPECIFICATIONS | ||||||
| Operating Ambient Temperature | TA | 55 | +150 | C | ||
| Storage Temperature | TS | 55 | +150 | C | ||
| PACKAGE THERMAL RESISTANCE | ||||||
| 3-lead SOT-89 | JA | 133 | C/W | |||
| PRODUCT SUMMARY | ||||||
| BVDSS/BVDGS | 200 | V | ||||
| RDS(ON) (Maximum) | 12 | |||||
| VGS(TH) (Maximum) | 2.4 | V | ||||
| ID(ON) (Minimum) | 750 | mA | ||||
2411220148_MICROCHIP-TP2520N8-G_C629206.pdf
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