High Cell Density Dual N Channel Power Transistors MATSUKI ME6980ED for Power Management in Devices
Key Attributes
Model Number:
ME6980ED
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
37pF
Number:
2 N-Channel
Output Capacitance(Coss):
123pF
Input Capacitance(Ciss):
365pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
ME6980ED
Package:
TSSOP-8
Product Description
Product Overview
The ME6980ED Dual N-Channel logic enhancement mode power field effect transistors are manufactured using high cell density, DMOS trench technology. This advanced process is optimized to minimize on-state resistance, making these devices ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface mount package.
Product Attributes
- Brand: Matsuki
- Product Code: ME6980ED / ME6980ED-G
- Certifications: Pb-free (ME6980ED), Green product-Halogen free (ME6980ED-G)
Technical Specifications
| Parameter | Symbol | Limit | Unit | Notes |
| Drain-Source Voltage | VDSS | 20 | V | |
| Gate-Source Voltage | VGSS | ±12 | V | |
| Continuous Drain Current (TA=25) | ID | 7.3 | A | tJ=150 |
| Continuous Drain Current (TA=70) | ID | 5.9 | A | |
| Pulsed Drain Current | IDM | 29 | A | |
| Maximum Power Dissipation (TA=25) | PD | 1.3 | W | |
| Maximum Power Dissipation (TA=70) | PD | 0.8 | W | |
| Operating Junction Temperature | TJ | -55 to 150 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 100 | /W | * The device mounted on 1in² FR4 board with 2 oz copper |
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250µA |
| Gate Threshold Voltage | VGS(th) | 0.6 - 1.2 | V | VDS=VGS, ID=250µA |
| Gate Leakage Current | IGSS | ±10 | µA | VDS=0V, VGS=±12V |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=20V, VGS=0V |
| Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) | 12 - 14.5 | mΩ | ID=5A |
| Drain-Source On-State Resistance (VGS=4.0V) | RDS(ON) | 12.5 - 15 | mΩ | ID=5A |
| Drain-Source On-State Resistance (VGS=3.1V) | RDS(ON) | 13.5 - 17 | mΩ | ID=5A |
| Drain-Source On-State Resistance (VGS=2.5V) | RDS(ON) | 16 - 20 | mΩ | ID=5A |
| Diode Forward Voltage | VSD | 0.9 - 1.2 | V | IS=10A, VGS=0V |
| Total Gate Charge | Qg | 36 | nC | VDS=16V, VGS=10V, ID=10A |
| Gate-Source Charge | Qgs | 19 | nC | VDS=16V, VGS=4.5V, ID=10A |
| Gate-Drain Charge | Qgd | 7.4 | nC | VDS=16V, VGS=4.5V, ID=10A |
| Input Capacitance | Ciss | 365 | pF | VDS=25V, VGS=0V,f=1MHz |
| Output Capacitance | Coss | 123 | pF | VDS=25V, VGS=0V,f=1MHz |
| Reverse Transfer Capacitance | Crss | 37 | pF | VDS=25V, VGS=0V,f=1MHz |
| Turn-On Delay Time | td(on) | 0.8 | µs | VDD=10V, RL =2Ω, ID=5A, VGEN=4V, RG=10Ω |
| Turn-On Rise Time | tr | 1.1 | µs | VDD=10V, RL =2Ω, ID=5A, VGEN=4V, RG=10Ω |
| Turn-Off Delay Time | td(off) | 4.6 | µs | VDD=10V, RL =2Ω, ID=5A, VGEN=4V, RG=10Ω |
| Turn-Off Fall Time | tf | 2.3 | µs | VDD=10V, RL =2Ω, ID=5A, VGEN=4V, RG=10Ω |
2410121523_MATSUKI-ME6980ED_C2693570.pdf
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