86--136 6733 2386
quality Trench MV MOSFET Technology in MCC 2N7002KHE3 TP N Channel MOSFET with UL 94 V 0 Flammability Rating factory
quality Trench MV MOSFET Technology in MCC 2N7002KHE3 TP N Channel MOSFET with UL 94 V 0 Flammability Rating factory

Trench MV MOSFET Technology in MCC 2N7002KHE3 TP N Channel MOSFET with UL 94 V 0 Flammability Rating

Key Attributes
Model Number: 2N7002KHE3-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
2.5Ω@10V,300mA
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
3pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
16pF@10V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
880pC@10V
Mfr. Part #:
2N7002KHE3-TP
Package:
SOT-23
Product Description

Product Overview

The 2N7002KHE3 is an N-Channel MOSFET featuring AEC-Q101 qualification and ESD protection up to 2KV (HBM). It utilizes Trench MV MOSFET Technology and is designed for high reliability with Moisture Sensitivity Level 1 and Halogen Free ("Green" Device) compliance. The epoxy meets UL 94 V-0 flammability rating, and the device is Lead Free Finish/RoHS Compliant. This MOSFET is suitable for applications requiring robust performance within an operating junction temperature range of -55C to +150C.

Product Attributes

  • Brand: MCCSEMI
  • Model: 2N7002KHE3
  • Qualification: AEC-Q101
  • ESD Protection: Up to 2KV (HBM)
  • Technology: Trench MV MOSFET
  • Moisture Sensitivity Level: 1
  • Environmental: Halogen Free. Green Device
  • Flammability Rating: Epoxy Meets UL 94 V-0
  • Compliance: Lead Free Finish/RoHS Compliant

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=10A 60 V
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=1mA 1.0 2.5 V
Gate-Body Leakage Current IGSS VGS=10V, VDS=0V 200 nA
Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V 1.0 A
Zero Gate Voltage Drain Current IDSS VGS=20V, VDS=0V 10 A
Drain-Source On-Resistance RDS(on) VGS=10V, ID=300mA 1.9 2.2
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=200mA 2.6 3.0
Forward Transconductance gFS VDS=5V, ID=300mA 300 mS
Continuous Body Diode Current IS 0.34 A
Diode Forward Voltage VSD VGS=0V, IS=300mA 1.36 V
Input Capacitance Ciss VDS=10V,VGS=0V,f=1MHz 11 pF
Output Capacitance Coss VDS=10V,VGS=0V,f=1MHz 2.5 pF
Reverse Transfer Capacitance Crss VDS=10V,VGS=0V,f=1MHz 0.34 pF
Total Gate Charge Qg VDD=30V,VGS=10V, ID=300mA 4.4 nC
Gate-Source Charge Qgs VDD=30V,VGS=10V, ID=300mA 1.5 nC
Gate-Drain Charge Qgd VDD=30V,VGS=10V, ID=300mA 0.88 nC
Turn-On Delay Time td(on) VDS=30V,VGS=10V, ID=300mA 3 ns
Turn-On Rise Time tr VDS=30V,VGS=10V, ID=300mA 11 ns
Turn-Off Delay Time td(off) VDS=30V,VGS=10V, ID=300mA 16 ns
Turn-Off Fall Time tf VDS=30V,VGS=10V, ID=300mA 4.4 ns
Gate Resistance Rg VDS=30V,VGS=10V, ID=300mA 3
Continuous Drain Current ID TA=25C 0.35 A
Continuous Drain Current ID TA=70C 0.27 A
Pulsed Drain Current IDM (Note 3) 1.36 A
Total Power Dissipation PD (Note 4) 0.34 W
Operating Junction Temperature Range -55 +150 C
Storage Temperature -55 +150 C
Thermal Resistance RJA Junction to Ambient (Note 2) 357 C/W
DIM INCHES MM NOTE
A 0.110 - 0.120 2.80 - 3.04
B 0.083 - 0.104 2.10 - 2.64
C 0.047 - 0.055 1.20 - 1.40
D 0.034 - 0.041 0.85 - 1.05
E 0.067 - 0.083 1.70 - 2.10
F 0.018 - 0.024 0.45 - 0.60
G 0.0004 - 0.006 0.01 - 0.15
H 0.035 - 0.043 0.90 - 1.10
J 0.003 - 0.007 0.08 - 0.18
K 0.012 - 0.020 0.30 - 0.51
L 0.020 0.50
Part Number Packing Part Number-TP
2N7002KHE3 Tape&Reel:3Kpcs/Reel ***

2410121950_MCC-2N7002KHE3-TP_C6404437.pdf

Related Products
quality NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency factory
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
quality General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage factory
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
quality Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability factory
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
quality RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW factory
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.