Power MOSFET MATSUKI ME80N75T Featuring Logic Enhancement Mode and High Continuous Drain Current Capability
Key Attributes
Model Number:
ME80N75T
Product Custom Attributes
Drain To Source Voltage:
75V
Current - Continuous Drain(Id):
93A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
8mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
144pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
6.2nF@20V
Pd - Power Dissipation:
140W
Gate Charge(Qg):
27nC@4.5V
Mfr. Part #:
ME80N75T
Package:
TO-220
Product Description
Product Overview
The ME80N75T is an N-Channel logic enhancement mode power field effect transistor designed using high cell density, DMOS trench technology. This advanced technology minimizes on-state resistance, offering super high density cell design for extremely low RDS(ON). It provides exceptional on-resistance and maximum DC current capability, making it suitable for power management, DC/DC converters, and load switch applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Pb-free (ME80N75T), Green product-Halogen free (ME80N75T-G)
Technical Specifications
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDSS | 75 | V |
| Gate-Source Voltage | VGSS | ±25 | V |
| Continuous Drain Current (TC=25) | ID | 93 | A |
| Continuous Drain Current (TC=70) | ID | 78 | A |
| Pulsed Drain Current | IDM | 372 | A |
| Maximum Power Dissipation (TC=25) | PD | 200 | W |
| Maximum Power Dissipation (TC=70) | PD | 140 | W |
| Operating Junction and Storage Temperature Range | TJ | -55 to 175 | |
| Thermal Resistance-Junction to Case (1in2 FR4 board with 2 oz copper) | RJC | 0.75 | /W |
| Drain-Source Breakdown Voltage (VGS=0V, ID=250A) | BVDSS | 75 | V |
| Gate Threshold Voltage (VDS=VGS, ID=250A) | VGS(th) | 2.0 - 4.0 | V |
| Gate-Body Leakage (VDS=0V, VGS=±25V) | IGSS | ±100 | nA |
| Zero Gate Voltage Drain Current (VDS=75V, VGS=0V) | IDSS | 1 | μA |
| Drain-Source On-Resistance (VGS=10V, ID=40A) | RDS(ON) | 8 - 10 | mΩ |
| Diode Forward Voltage (IS=40A, VGS=0V) | VSD | 0.9 - 1.2 | V |
| Total Gate Charge (VDD=60V, VGS=10V, ID=75A) | Qg | 134 | nC |
| Total Gate Charge (VDD=60V, VGS=4.5V, ID=75A) | Qg | 27 | nC |
| Gate-Source Charge | Qgs | 36 | nC |
| Gate-Drain Charge | Qgd | 50 | nC |
| Gate Resistance | Rg | 0.8 | Ω |
| Input Capacitance (VDS=20V, VGS=0V, f=1MHz) | Ciss | 6200 | pF |
| Output Capacitance (VDS=20V, VGS=0V, f=1MHz) | Coss | 437 | pF |
| Reverse Transfer Capacitance | Crss | 144 | pF |
| Turn-On Delay Time (VGS =10V, RL=15Ω, VDD=30V, RG=10Ω) | td(on) | 60 | ns |
| Turn-On Rise Time | tr | 43 | ns |
| Turn-Off Delay Time | td(off) | 159 | ns |
| Turn-Off Fall Time | tf | 47 | ns |
2410121457_MATSUKI-ME80N75T_C709755.pdf
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