P channel transistor MICRONE MEM2307XG with dissipation and advanced DMOS trench technology in SOT23
Key Attributes
Model Number:
MEM2307XG
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
RDS(on):
88mΩ@10V,4.1A
Gate Threshold Voltage (Vgs(th)):
1.3V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 P-Channel
Input Capacitance(Ciss):
700pF
Output Capacitance(Coss):
120pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
14.3nC@4.5V
Mfr. Part #:
MEM2307XG
Package:
SOT-23
Product Description
Product Overview
The MEM2307XG is a P-channel enhancement mode field-effect transistor utilizing high cell density DMOS trench technology to minimize on-state resistance. It is particularly suited for low voltage applications, offering low power dissipation in a subminiature SOT23 surface mount package. Key features include ultra-low on-resistance and a high-density cell design.
Product Attributes
- Brand: MEM2307XG Series
- Origin: www.microne.com.cn
- Package: SOT23
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Test Condition | Min | Type | Max |
| Drain-Source Voltage | VDSS | -30 | V | ||||
| Gate-Source Voltage | VGSS | 20 | V | ||||
| Drain Current (TA=25) | ID | -4.1 | A | ||||
| Drain Current (TA=70) | ID | -3.5 | A | ||||
| Pulsed Drain Current | IDM | -20 | A | 1,2 | |||
| Total Power Dissipation (TA=25) | Pd | 1.4 | W | ||||
| Total Power Dissipation (TA=70) | Pd | 1.0 | W | ||||
| Operating Temperature Range | TOpr | 150 | -55 | ||||
| Storage Temperature Range | Tstg | 150 | -55 | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-250uA | -30 | ||
| Gate Threshold Voltage | VGS(th) | V | VDS= VGS, ID=-250uA | -1 | -1.3 | -2 | |
| Gate-Body Leakage | IGSS | 100 | nA | VDS=0VVGS=20V | |||
| Zero Gate Voltage Drain Current | IDSS | -1000 | nA | VDS=-24V VGS=0V | |||
| Static Drain-Source On-Resistance | RDS(ON)1 | 88 | m | VGS=-10V,ID=-4.1A | |||
| Static Drain-Source On-Resistance | RDS(ON)2 | 108 | m | VGS=-4.5V,ID=-3A | |||
| Forward Transconductance | gFS | 5.5 | S | VDS = 5 V, ID = 4A | 8.2 | ||
| Maximum Body-Diode Continuous Current | Is | -2.2 | A | ||||
| Source-drain (diode forward) voltage | VSD | V | VGS=0V,IS=-1A | 0.77 | -1.0 | ||
| Input Capacitance | Ciss | 700 | pF | VGS=0V, VDS=-15V, f=1MHz | 840 | ||
| Output Capacitance | Coss | 120 | pF | VGS=0V, VDS=-15V, f=1MHz | |||
| Reverse Transfer Capacitance | Crss | 75 | pF | VGS=0V, VDS=-15V, f=1MHz | |||
| Gate resistance | Rg | 10 | VGS=0V, VDS=0V, f=1MHz | 15 | |||
| Turn-On Delay Time | td(on) | 8.6 | ns | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | |||
| Rise Time | tr | 5 | ns | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | |||
| Turn-Off Delay Time | td(off) | 28.2 | ns | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | |||
| Fall-Time | tf | 13.5 | ns | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | |||
| Total Gate Charge | Qg | 14.3 | nC | VDS = -15 V, VGS = -4.5 V, ID = -4A | |||
| Gate-Source Charge | Qgs | 3.1 | nC | VDS = -15 V, VGS = -4.5 V, ID = -4A | |||
| Gate-Drain Charge | Qg d | 3 | nC | VDS = -15 V, VGS = -4.5 V, ID = -4A |
2410121317_MICRONE-MEM2307XG_C94054.pdf
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