MCC 2N7002KA TP N Channel MOSFET Designed for Low RDS ON High Density Cell and Switching Performance
Key Attributes
Model Number:
2N7002KA-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
5Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
8pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
35pF@25V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
2N7002KA-TP
Package:
SOT-23
Product Description
Product Overview
The 2N7002KA is an N-Channel MOSFET designed as a voltage-controlled small signal switch. It features a high-density cell design for low RDS(ON) and is ESD protected up to 2KV (HBM). This component is suitable for applications requiring a reliable and efficient switching solution. The epoxy used meets UL 94 V-0 flammability rating, and it is Moisture Sensitivity Level 1 compliant. Halogen-free options are available upon request by adding the "-HF" suffix. The device is lead-free and RoHS compliant, indicated by the "P" suffix.
Product Attributes
- Brand: MCCSEMI
- Model: 2N7002KA
- Channel Type: N-Channel MOSFET
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- RoHS Compliant: Yes (indicated by "P" suffix)
- Halogen Free: Available upon request (by adding "-HF" suffix)
- ESD Protection: Up to 2KV (HBM)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250µA | 60 | V | ||
| Gate-Threshold Voltage(1) | VGS(th) | VDS=VGS, ID=250µA | 1.0 | 1.4 | 2.5 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | 1.0 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | ±10 | µA | ||
| Drain-Source On-Resistance(1) | RDS(on) | VGS=10V, ID=500mA | 5.0 | Ω | ||
| VGS=4.5V, ID=200mA | 5.3 | 30 | Ω | |||
| Input Capacitance(2) | Ciss | VDS=25V,VGS=0V, f=1MHz | 35 | pF | ||
| Output Capacitance(2) | Coss | VDS=25V,VGS=0V, f=1MHz | 13 | pF | ||
| Reverse Transfer Capacitance(2) | Crss | VDS=25V,VGS=0V, f=1MHz | 8 | pF | ||
| Turn-on Delay Time(2) | td(on) | VDD=25V,VGS=10V,RL=250Ω, RGS=50Ω,RGEN=25Ω | 10 | ns | ||
| Turn-off Delay Time(2) | td(off) | VDD=25V,VGS=10V,RL=250Ω, RGS=50Ω,RGEN=25Ω | 15 | ns | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=300mA,VR=25V | 0.82 | 1.3 | V | |
| Recovered Charge | Qr | dl/dt=-100A/μs | 200 | nC | ||
| Reverse Recovery Time | trr | VGS=0V, IS=300mA,VR=25V, dl/dt=-100A/μs | 30 | ns | ||
| Gate-Source Breakdown Voltage | BVGSO | IGS=±1mA,(Open Drain) | ±21.5 | ±30 | V | |
| Tape&Reel:3Kpcs/Reel | ||||||
| 2N7002KA | TP | 2N7002KA-TP | 2410010230_MCC-2N7002KA-TP_C721429.pdf
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