MEM2402K3G N Channel Trench MOSFET with Ultra Low On Resistance and 60V Drain Source Voltage Rating
Key Attributes
Model Number:
MEM2402K3G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+175℃
RDS(on):
50mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 N-channel
Output Capacitance(Coss):
66pF
Input Capacitance(Ciss):
778pF
Pd - Power Dissipation:
23W
Gate Charge(Qg):
13.5nC
Mfr. Part #:
MEM2402K3G
Package:
TO-252
Product Description
Product Overview
The MEM2402 is an N-CHANNEL Trench Power MOSFET designed with advanced trench MOSFET technology for extremely low RDS(ON). Its low resistance package makes it suitable for PWM, load switching, and general-purpose applications. Key features include VDS of 60V, ID of 15A, and ultra-low on-resistance.
Product Attributes
- Brand: Microne
- Origin: China (www.microne.com.cn)
- Package Type: TO-252
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage(VGS=0V) | VDSS | 60 | V | |||
| Gate-Source Voltage(VDS=0V) | VGSS | 20 | V | |||
| Drain Current TA=25 | ID | 15 | A | |||
| Drain Current TA=100 | ID | 10.5 | A | |||
| Pulsed Drain Current (Note1) | IDM | 60 | A | |||
| Total Power Dissipation TA=25 | Pd | 23 | W | |||
| Single Pulse Avalanche Energy (Note2) | EAS | 25 | mJ | |||
| Operating Temperature Range | TOpr | -55 | 175 | |||
| Storage Temperature Range | Tstg | -55 | 175 | |||
| Thermal Characteristics | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 6.6 | /W | |||
| Electrical Characteristics(Ta=25) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250uA | 60 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250uA | 1.0 | 2.2 | 3.0 | V |
| Gate-Body Leakage | IGSS | VDS=0VVGS=20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V VGS=0V TA=25 | 1 | uA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V VGS=0V TA=100 | 5 | uA | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=12A | 36 | 45 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=6A | 37 | 50 | m | |
| Dynamic Characteristics | ||||||
| Forward Transconductance | gFS | VDS =10V, ID= 15A | 12 | - | - | S |
| Input Capacitance | Ciss | VDS = 30 V, VGS = 0 V, f = 1 MHz | 778 | - | pF | |
| Output Capacitance | Coss | 66 | - | |||
| Reverse Transfer Capacitance | Crss | 41 | - | |||
| Total Gate Charge | Qg | VDS = 30V, VGS = 10V, ID = 15A | 13.5 | - | nC | |
| Gate-Source Charge | Qgs | 3.2 | - | |||
| Gate-Drain Charge | Qg d | 6.2 | - | |||
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Current(Body Diode) | ISD | 15 | - | A | ||
| Pulsed Source-Drain Current(Body Diode) | ISD | 60 | - | A | ||
| Source-drain (diode forward) voltage(Note1) | VSD | TA=25,VGS=0V,ISD=1A | 0.75 | 1.0 | V | |
| Reverse Recovery Time(Note1) | trr | TA=25,IF=15A,di/dt=100A/uA | 27 | - | nS | |
| Reverse Recovery Charge(Note1) | Qrr | 30 | - | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDS = 30 V, RG = 3 VGS = 10V, RL = 2.5 | 4.2 | - | ns | |
| Rise Time | tr | 3.4 | - | |||
| Turn-Off Delay Time | td(off) | 16 | - | |||
| Fall-Time | tf | 2 | - | |||
2410121313_MICRONE-MEM2402K3G_C2875119.pdf
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