Trench MV MOSFET MCC 2N7002KT TP N Channel Device with Moisture Sensitivity Level 1 and Halogen Free
Product Overview
This N-Channel MOSFET, designated as the K7 series and compliant with RoHS standards, features Trench MV MOSFET Technology for efficient power management. It offers ESD protection up to 2.5KV (HBM) and is designed with moisture sensitivity level 1. The device is Halogen Free, a "Green" device, and its epoxy meets UL 94 V-0 flammability rating, with a Lead Free finish. It is suitable for applications requiring reliable switching and power control.
Product Attributes
- Brand: Micro Commercial Components Corp. (MCC)
- Technology: Trench MV MOSFET
- Compliance: RoHS Compliant, Halogen Free ("Green" Device), UL 94 V-0 Flammability Rating
- Package: SOT-523
- Marking Code: 72K
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain-Source Voltage | VDS | 60 | V | |||
| Continuous Drain Current | ID | TA=25°C | 0.30 | A | ||
| Continuous Drain Current | ID | TA=70°C | 0.24 | A | ||
| Pulsed Drain Current | IDM | (Note 3) | 1.2 | A | ||
| Total Power Dissipation | PD | (Note 4) | 0.30 | W | ||
| Operating Junction Temperature Range | -55 | +150 | °C | |||
| Storage Temperature | -55 | +150 | °C | |||
| Junction to Ambient Thermal Resistance | RθJA | (Note 2) | 833 | °C/W | ||
| Electrical Characteristics @ 25°C | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=10µA | 60 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250µA | 1.0 | 2.5 | V | |
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | ±10 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | µA | ||
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=300mA | 2.5 | Ω | ||
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=200mA | 3.0 | Ω | ||
| Forward Transconductance | gFS | VDS=5V, ID=300mA | 300 | mS | ||
| Continuous Body Diode Current | IS | 0.30 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=300mA | 1.0 | 1.5 | V | |
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | 130 | pF | ||
| Output Capacitance | Coss | VDS=25V,VGS=0V,f=1MHz | 11 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V,f=1MHz | 15.6 | pF | ||
| Total Gate Charge | Qg | VDD=30V,VGS=10V, ID=300mA | 4 | nC | ||
| Gate-Source Charge | Qgs | VDD=30V,VGS=10V, ID=300mA | 3 | nC | ||
| Gate-Drain Charge | Qgd | VDD=30V,VGS=10V, ID=300mA | 0.15 | nC | ||
| Turn-On Delay Time | td(on) | VDS=30V,VGS=10V, RG=50Ω, RL=250Ω | 3 | ns | ||
| Turn-On Rise Time | tr | VDS=30V,VGS=10V, RG=50Ω, RL=250Ω | 11 | ns | ||
| Turn-Off Delay Time | td(off) | VDS=30V,VGS=10V, RG=50Ω, RL=250Ω | 31 | ns | ||
| Turn-Off Fall Time | tf | VDS=30V,VGS=10V, RG=50Ω, RL=250Ω | 11 | ns | ||
| Reverse Recovery Time | trr | IF=300mA, dIF/dt=100A/μs | 100 | ns | ||
| Reverse Recovery Charge | Qrr | IF=300mA, dIF/dt=100A/μs | 1.2 | µC | ||
| Gate Resistance | Rg | 1 | Ω | |||
| Dimensions (SOT-523) | ||||||
| Dimension | A | 1.50 | 1.70 | mm | ||
| Dimension | B | 1.45 | 1.75 | mm | ||
| Dimension | C | 0.75 | 0.85 | mm | ||
| Dimension | D | 0.90 | 1.10 | mm | ||
| Dimension | E | 0.90 | 1.10 | mm | ||
| Dimension | G | 0.00 | 0.10 | mm | ||
| Dimension | H | 0.60 | 0.80 | mm | ||
| Dimension | J | 0.10 | 0.20 | mm | ||
| Dimension | K | 0.15 | 0.35 | mm | ||
| Device Packing | ||||||
| Part Number | Type | Tape & Reel | Reel Size | |||
| K7 | *** | SFV | 1 | |||
Notes:
- Note 1: Halogen free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
- Note 2: The value of RθJA is measured with the device mounted on the minimum recommended pad size, in a still air environment with TA =25°C.
- Note 3: Repetitive rating; pulse width limited by max. junction temperature.
- Note 4: PD is based on max. junction temperature, using junction-ambient thermal resistance.
2504101957_MCC-2N7002KT-TP_C3290137.pdf
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