Trench MV MOSFET MCC 2N7002KT TP N Channel Device with Moisture Sensitivity Level 1 and Halogen Free

Key Attributes
Model Number: 2N7002KT-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
RDS(on):
2.5Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
1 N-channel
Output Capacitance(Coss):
3pF
Pd - Power Dissipation:
150mW
Input Capacitance(Ciss):
15.6pF
Gate Charge(Qg):
880pC@10V
Mfr. Part #:
2N7002KT-TP
Package:
SOT-523
Product Description

Product Overview

This N-Channel MOSFET, designated as the K7 series and compliant with RoHS standards, features Trench MV MOSFET Technology for efficient power management. It offers ESD protection up to 2.5KV (HBM) and is designed with moisture sensitivity level 1. The device is Halogen Free, a "Green" device, and its epoxy meets UL 94 V-0 flammability rating, with a Lead Free finish. It is suitable for applications requiring reliable switching and power control.

Product Attributes

  • Brand: Micro Commercial Components Corp. (MCC)
  • Technology: Trench MV MOSFET
  • Compliance: RoHS Compliant, Halogen Free ("Green" Device), UL 94 V-0 Flammability Rating
  • Package: SOT-523
  • Marking Code: 72K

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Gate-Source Voltage VGS ±20 V
Drain-Source Voltage VDS 60 V
Continuous Drain Current ID TA=25°C 0.30 A
Continuous Drain Current ID TA=70°C 0.24 A
Pulsed Drain Current IDM (Note 3) 1.2 A
Total Power Dissipation PD (Note 4) 0.30 W
Operating Junction Temperature Range -55 +150 °C
Storage Temperature -55 +150 °C
Junction to Ambient Thermal Resistance RθJA (Note 2) 833 °C/W
Electrical Characteristics @ 25°C
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=10µA 60 V
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250µA 1.0 2.5 V
Gate-Body Leakage Current IGSS VGS=±20V, VDS=0V ±10 µA
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1.0 µA
Drain-Source On-Resistance RDS(on) VGS=10V, ID=300mA 2.5 Ω
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=200mA 3.0 Ω
Forward Transconductance gFS VDS=5V, ID=300mA 300 mS
Continuous Body Diode Current IS 0.30 A
Diode Forward Voltage VSD VGS=0V, IS=300mA 1.0 1.5 V
Input Capacitance Ciss VDS=25V,VGS=0V,f=1MHz 130 pF
Output Capacitance Coss VDS=25V,VGS=0V,f=1MHz 11 pF
Reverse Transfer Capacitance Crss VDS=25V,VGS=0V,f=1MHz 15.6 pF
Total Gate Charge Qg VDD=30V,VGS=10V, ID=300mA 4 nC
Gate-Source Charge Qgs VDD=30V,VGS=10V, ID=300mA 3 nC
Gate-Drain Charge Qgd VDD=30V,VGS=10V, ID=300mA 0.15 nC
Turn-On Delay Time td(on) VDS=30V,VGS=10V, RG=50Ω, RL=250Ω 3 ns
Turn-On Rise Time tr VDS=30V,VGS=10V, RG=50Ω, RL=250Ω 11 ns
Turn-Off Delay Time td(off) VDS=30V,VGS=10V, RG=50Ω, RL=250Ω 31 ns
Turn-Off Fall Time tf VDS=30V,VGS=10V, RG=50Ω, RL=250Ω 11 ns
Reverse Recovery Time trr IF=300mA, dIF/dt=100A/μs 100 ns
Reverse Recovery Charge Qrr IF=300mA, dIF/dt=100A/μs 1.2 µC
Gate Resistance Rg 1 Ω
Dimensions (SOT-523)
Dimension A 1.50 1.70 mm
Dimension B 1.45 1.75 mm
Dimension C 0.75 0.85 mm
Dimension D 0.90 1.10 mm
Dimension E 0.90 1.10 mm
Dimension G 0.00 0.10 mm
Dimension H 0.60 0.80 mm
Dimension J 0.10 0.20 mm
Dimension K 0.15 0.35 mm
Device Packing
Part Number Type Tape & Reel Reel Size
K7 *** SFV 1

Notes:

  • Note 1: Halogen free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
  • Note 2: The value of RθJA is measured with the device mounted on the minimum recommended pad size, in a still air environment with TA =25°C.
  • Note 3: Repetitive rating; pulse width limited by max. junction temperature.
  • Note 4: PD is based on max. junction temperature, using junction-ambient thermal resistance.

2504101957_MCC-2N7002KT-TP_C3290137.pdf

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