Compact surface mount P channel MOSFET MATSUKI ME2345A designed for loss in battery powered circuits
Key Attributes
Model Number:
ME2345A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
100mΩ@2.5V,2A
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 P-Channel
Input Capacitance(Ciss):
710pF
Output Capacitance(Coss):
70pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
9nC@4.5V
Mfr. Part #:
ME2345A
Package:
SOT-23
Product Description
Product Overview
The ME2345A is a P-Channel logic enhancement mode power MOSFET utilizing high cell density DMOS trench technology. This design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring efficient switching and low power loss in a compact surface-mount package.
Product Attributes
- Brand: ME (implied by model number)
- Product Line: ME2345A/ME2345A-G
- Certifications: Pb-free (ME2345A), Green product-Halogen free (ME2345A-G)
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Limit | Min | Typ | Max | Unit | Conditions |
| Drain-Source Voltage | VDS | Maximum Ratings | -30 | V | |||
| Gate-Source Voltage | VGS | Maximum Ratings | 12 | V | |||
| Continuous Drain Current | ID | Maximum Ratings | -3.6 | -2.9 | A | TA=25, TA=70 | |
| Pulsed Drain Current | IDM | Maximum Ratings | -14 | A | |||
| Maximum Power Dissipation | PD | Maximum Ratings | 1.4 | 1 | W | TA=25, TA=70 | |
| Operating Junction Temperature | TJ | Maximum Ratings | -55 | 150 | |||
| Thermal Resistance-Junction to Ambient | RJA | Maximum Ratings | 90 | /W | *The device mounted on 1in2 FR4 board with 2 oz copper | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | STATIC | -30 | V | VGS=0V, ID=-250A | ||
| Gate Threshold Voltage | VGS(th) | STATIC | -0.6 | -1.3 | V | VDS=VGS, ID=-250A | |
| Gate Leakage Current | IGSS | STATIC | 100 | nA | VDS=0V, VGS=12V | ||
| Zero Gate Voltage Drain Current | IDSS | STATIC | -1 | A | VDS=-24V, VGS=0V | ||
| Drain-Source On-Resistance | RDS(ON) | STATIC | m | VGS=-10V, ID= -4.2A (57, 68); VGS=-4.5V, ID= -4A (62, 80); VGS=-2.5V, ID= -2A (80, 100) | |||
| Diode Forward Voltage | VSD | STATIC | -0.7 | -1 | V | IS=-1A, VGS=0V | |
| Total Gate Charge | Qg | DYNAMIC | 9 | nC | VDS=-15V, VGS=-4.5V, ID=-4A | ||
| Gate-Source Charge | Qgs | DYNAMIC | 2.3 | nC | VDS=-15V, VGS=-4.5V, ID=-4A | ||
| Gate-Drain Charge | Qgd | DYNAMIC | 2 | nC | VDS=-15V, VGS=-4.5V, ID=-4A | ||
| Input Capacitance | Ciss | DYNAMIC | 710 | pF | VDS=-15V, VGS=0V,f=1MHz | ||
| Output Capacitance | Coss | DYNAMIC | 70 | pF | VDS=-15V, VGS=0V,f=1MHz | ||
| Reverse Transfer Capacitance | Crss | DYNAMIC | 20 | pF | VDS=-15V, VGS=0V,f=1MHz | ||
| Turn-On Delay Time | td(on) | DYNAMIC | 37 | ns | VDS=-15V, RL =3.6 RGEN=6, VGS=-10V | ||
| Turn-On Rise Time | tr | DYNAMIC | 23 | ns | VDS=-15V, RL =3.6 RGEN=6, VGS=-10V | ||
| Turn-Off Delay Time | td(off) | DYNAMIC | 46 | ns | VDS=-15V, RL =3.6 RGEN=6, VGS=-10V | ||
| Turn-Off Fall time | tf | DYNAMIC | 3 | ns | VDS=-15V, RL =3.6 RGEN=6, VGS=-10V |
2410121449_MATSUKI-ME2345A_C145076.pdf
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