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quality Dual N Channel MOSFET MCC 2N7002DW TP with High Density Cell Design and Moisture Sensitivity Level 1 factory
quality Dual N Channel MOSFET MCC 2N7002DW TP with High Density Cell Design and Moisture Sensitivity Level 1 factory

Dual N Channel MOSFET MCC 2N7002DW TP with High Density Cell Design and Moisture Sensitivity Level 1

Key Attributes
Model Number: 2N7002DW-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
1.1Ω@10V;1.3Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.2pF
Number:
2 N-Channel
Output Capacitance(Coss):
3.5pF
Input Capacitance(Ciss):
25.2pF
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
1.1nC@10V
Mfr. Part #:
2N7002DW-TP
Package:
SOT-363
Product Description

Product Overview

The 2N7002DW is a dual N-channel MOSFET designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(ON) and meets UL 94 V-0 flammability rating. This device is Moisture Sensitivity Level 1, Halogen Free, Green, and Lead Free/RoHS Compliant. It is suitable for general-purpose applications where a compact and reliable MOSFET is required.

Product Attributes

  • Brand: MCCSEMI.COM
  • Model: 2N7002DW
  • Channel Type: Dual N-Channel
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Environmental Compliance: Halogen Free, Green Device, Lead Free Finish/RoHS Compliant
  • Package Type: SOT-363

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID TA=25C 300 mA
Continuous Drain Current ID TA=100C 215 mA
Pulsed Drain Current IDM (Note 3) 1.36 A
Total Power Dissipation PD (Note 4) 1.15 W
Operating Junction Temperature Range -55 150 C
Storage Temperature Range -55 150 C
Junction to Ambient Thermal Resistance (Steady-State) RJA (Note 2) 415 C/W
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 60 V
Gate-Source Leakage Current IGSS VDS=0V, VGS=20V 10 nA
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 80 nA
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.0 2.5 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=300mA 1.1 1.3
Continuous Body Diode Current IS 340 mA
Diode Forward Voltage VSD VGS=0V, IS=115mA 0.55 1.2 V
Reverse Recovery Time trr IF=0.5A, dIF/dt=100A/s 2.7 ns
Reverse Recovery Charge Qrr IF=0.5A, dIF/dt=100A/s 2.3 nC
Input Capacitance Ciss VDS=25V,VGS=0V,f=1MHz 25.2 pF
Output Capacitance Coss VDS=25V,VGS=0V,f=1MHz 6.3 pF
Reverse Transfer Capacitance Crss VDS=25V,VGS=0V,f=1MHz 3 pF
Total Gate Charge Qg VDD=25V, VGEN=10V, RGEN=25, IDS=500mA 3.5 nC
Gate-Source Charge Qgs VDD=25V, VGEN=10V, RGEN=25, IDS=500mA 2.2 nC
Gate-Drain Charge Qgd VDD=25V, VGEN=10V, RGEN=25, IDS=500mA 1.1 nC
Turn-On Delay Time td(on) VDS=25V,VGS=10V,ID=0.5A 115 ns
Turn-On Rise Time tr VDS=25V,VGS=10V,ID=0.5A 115 ns
Turn-Off Delay Time td(off) VDS=25V,VGS=10V,ID=0.5A 190 ns
Turn-Off Fall Time tf VDS=25V,VGS=10V,ID=0.5A 190 ns
Forward Transconductance gfs VDS =10V, ID =200mA 80 mS
Gate Resistance Rg F=1 MHz, Open drain 4.1

2409301804_MCC-2N7002DW-TP_C194045.pdf

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