High Cell Density DMOS Trench Dual N Channel MOSFET MATSUKI ME8205E G for Power Management Solutions
Key Attributes
Model Number:
ME8205E-G
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
-
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
31pF@15V
Number:
2 N-Channel
Input Capacitance(Ciss):
360pF@10V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
21.9nC@10V
Mfr. Part #:
ME8205E-G
Package:
SOT-26
Product Description
Product Overview
The ME8205E is a Dual N-Channel logic enhancement mode power field effect transistor utilizing high cell density DMOS trench technology. This advanced design minimizes on-state resistance, making it ideal for low-voltage applications such as power management in cellular phones and notebook computers, as well as other battery-powered circuits requiring high-side switching and low in-line power loss in a compact surface mount package.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: Pb-free (ME8205E), Green product-Halogen free (ME8205E-G)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 20 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 0.5 | 1.0 | V | |
| Gate Leakage Current | IGSS | VDS=0V, VGS=8V | 10 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | A | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID= 7A | 15.5 | 22 | m | |
| VGS=4V, ID= 6.8A | 16 | 23 | m | |||
| VGS=3V, ID= 6.3A | 18 | 26 | m | |||
| VGS=2.5V, ID= 6.0A | 20 | 29 | m | |||
| Diode Forward Voltage | VSD | IS=7A, VGS=0V | 1.2 | V | ||
| Total Gate Charge | Qg | VDS=10V, VGS=10V, ID=6.5A | 21.9 | nC | ||
| VDS=10V, VGS=4.5V, ID=6.5A | 10.5 | nC | ||||
| Gate-Source Charge | Qgs | 3.1 | nC | |||
| Gate-Drain Charge | Qgd | 2.5 | nC | |||
| Input Capacitance | Ciss | VDS=15V, VGS=0V,f=1MHz | 360 | pF | ||
| Output Capacitance | Coss | VDS=15V, VGS=0V,f=1MHz | 100 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V,f=1MHz | 31 | pF | ||
| Turn-On Delay Time | td(on) | VDD=10V, RL =10 ID=1A, VGEN=4.5V RG=6 | 310 | ns | ||
| Turn-On Rise Time | tr | VDD=10V, RL =10 ID=1A, VGEN=4.5V RG=6 | 441 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=10V, RL =10 ID=1A, VGEN=4.5V RG=6 | 1290 | ns | ||
| Turn-Off Fall Time | tf | VDD=10V, RL =10 ID=1A, VGEN=4.5V RG=6 | 5150 | ns |
2411220117_MATSUKI-ME8205E-G_C709735.pdf
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