Durable MOSFET transistor MATSUKI ME2N7002E designed for low voltage and low current switching needs
Key Attributes
Model Number:
ME2N7002E
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
6pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
43pF@25V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
ME2N7002E
Package:
SOT-23
Product Description
Product Overview
The ME2N7002E is an N-Channel enhancement mode field-effect transistor utilizing high cell density DMOS technology. It is designed for low on-state resistance, providing rugged, reliable, and fast switching performance. This transistor is suitable for applications requiring up to 300mA DC and can handle pulsed currents up to 1.2A, making it ideal for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | PARAMETER | Ratings | Units | Test Conditions |
| VDSS | Drain-Source Voltage | 60 | V | VGS =0V, ID=250A |
| VGSS | Gate-Source Voltage - Continuous | ±20 | V | |
| VGSS | Gate-Source Voltage - Non Repetitive (tp < 50µs) | ±40 | V | |
| ID | Drain Current - Continuous (TJ=150°C) | 300 | mA | TA=25°C |
| ID | Drain Current - Pulsed (Note 1) | 1200 | mA | |
| PD | Power Dissipation | 350 | mW | TA=25°C |
| TJ , TSTG | Operating and Storage Temperature Range | -55 ~ +150 | °C | |
| RθJA | Thermal Resistance, Junction-to-Ambient | 375 | °C/W | |
| BVDSS | Drain-Source Breakdown Voltage | 60 | V | V GS =0V, ID=250µA |
| IDSS | Zero Gate Voltage Drain Current | 1 (10 @ TJ=125°C) | µA | V DS =60V, V GS =0V |
| IGSSF | Gate-Body Leakage, Forward | 100 | nA | V DS =0V, V GS = 20V |
| IGSSR | Gate-Body Leakage, Reverse | -100 | nA | V DS =0V, V GS = -20V |
| VGS(th) | Gate Threshold Voltage | 1 ~ 2.5 | V | V GS = V DS, ID=250µA |
| RDS(ON) | Static Drain-Source On-Resistance | 2.5 ~ 5.5 | Ω | V GS = 10V, ID=500mA / V GS = 4.5V, ID=300mA |
| ISD | Source-drain Current | 0.35 | A | |
| ISDM(2) | Source-drain Current (pulsed) | 1.4 | A | |
| GF S(1) | Forward Trans-conductance | 0.6 | S | VDS=10V , ID=500mA |
| VSD(1) | Diode Forward Voltage | 0.85 ~ 1.5 | V | V GS = 0V , IS=0.12mA |
| CISS | Input Capacitance | 43 | pF | |
| COSS | Output Capacitance | 20 | pF | |
| CRSS | Reverse Transfer Capacitance | 6 | pF | VDS =25V,V GS =0V, F=1.0MHz |
| QG | Total Gate Charge | 1.4 ~ 2.0 | nC | |
| QGS | Gate-Source Charge | 0.8 | nC | VDD =30V, ID=1A ,VGS = 5V |
| QGD | Gate-Drain Charge | 0.5 | nC | VDD =30V, ID=1A ,VGS = 5V |
| TD(ON) | Turn-On Time | 6 | nS | VDD =30V,R G =4.7Ω, ID=500mA VGS = 4.5V |
| TR | Turn-On Time | 5 | nS | VDD =30V,R G =4.7Ω, ID=500mA VGS = 4.5V |
| TD(OFF) | Turn-Off Time | 15 | nS | VDD =30V,R G =4.7Ω, ID=500mA VGS = 4.5V |
| TR | Turn-Off Time | 6 | nS | VDD =30V,R G =4.7Ω, ID=500mA VGS = 4.5V |
2411220226_MATSUKI-ME2N7002E_C709726.pdf
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