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quality MCC SI8810 TP N Channel MOSFET Featuring Low RDS ON and Halogen Free Option for Environmental Safety factory
quality MCC SI8810 TP N Channel MOSFET Featuring Low RDS ON and Halogen Free Option for Environmental Safety factory

MCC SI8810 TP N Channel MOSFET Featuring Low RDS ON and Halogen Free Option for Environmental Safety

Key Attributes
Model Number: SI8810-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
20mΩ@10V,7A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
145pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.15nF
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
15nC
Mfr. Part #:
SI8810-TP
Package:
SOT-23
Product Description

Product Overview

The SI8810 is an N-Channel MOSFET designed for various applications. It features low RDS(ON), a rugged and reliable construction, and ESD protected gate. This component is RoHS compliant, lead-free, and meets UL 94 V-0 flammability rating. It is also available in Halogen Free upon request. The SI8810 is suitable for applications requiring efficient power switching and robust performance.

Product Attributes

  • Brand: MCCSEMI.COM
  • Product Type: N-Channel MOSFET
  • Package Type: SOT-23
  • Certifications: RoHS Compliant, UL 94 V-0 Flammability Rating, Moisture Sensitivity Level 1
  • Availability: Halogen Free upon request (by adding suffix "-HF")

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS 12 V
Drain Current ID 7.0 A
Pulsed Drain Current (Note 1) IDM 30 A
Total Power Dissipation PD 0.3 W
Operating Junction Temperature Range -55 +150 C
Storage Temperature Range -55 +150 C
Thermal Resistance Junction to Ambient (Note 1) 417 C/W
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 20 V
Gate-Threshold Voltage (Note 1) VGS(th) VDS=VGS, ID=250A 0.4 1.0 V
Gate-Body Leakage Current IGSS VGS = 4.5V, VDS =0V 1 A
IGSS VGS = 8V, VDS =0V 10 A
Zero Gate Voltage Drain Current IDSS VDS =16V, VGS =0V 1 A
Drain-Source On-Resistance (Note 1) RDS(on) VGS=10V, ID=7A 20 m
RDS(on) VGS=4.5V, ID=6.6A 22 m
RDS(on) VGS=3.8V, ID=6A 24 m
RDS(on) VGS=2.5V, ID=5.5A 26 m
RDS(on) VGS=1.8V, ID=5A 39 m
Forward Tranconductance (Note 1) gfs VDS=5V, ID=7A 9 S
Diode Forward Voltage (Note 1) VSD VGS=0V, IS=1A 1 V
Input Capacitance Ciss VDS=10V,VGS=0V, f=1MHz 1150 pF
Output Capacitance Coss VDS=10V,VGS=0V, f=1MHz 185 pF
Reverse Transfer Capacitance Crss VDS=10V,VGS=0V, f=1MHz 145 pF
Turn-On Delay Time (Note 2) td(on) VDD=10V,VGS=5V,RL=1.35, RGEN=3 6 ns
Turn-On Rise Time (Note 2) tr VDD=10V,VGS=5V,RL=1.35, RGEN=3 13 ns
Turn-Off Delay Time (Note 2) td(off) VDD=10V,VGS=5V,RL=1.35, RGEN=3 52 ns
Turn-Off Fall Time (Note 2) tf VDD=10V,VGS=5V,RL=1.35, RGEN=3 16 ns
Total Gate Charge Qg VDS=10V,VGS=4.5V,ID=7A 15 nC
Gate-Source Charge Qgs VDS=10V,VGS=4.5V,ID=7A 0.8 nC
Gate-Drain Charge Qgd VDS=10V,VGS=4.5V,ID=7A 3.2 nC
DIM INCHES MM NOTE
A 0.110 - 0.120 2.80 - 3.04
B 0.083 - 0.104 2.10 - 2.64
C 0.047 - 0.055 1.20 - 1.40
D 0.034 - 0.041 0.85 - 1.05
E 0.067 - 0.083 1.70 - 2.10
F 0.018 - 0.024 0.45 - 0.60
G 0.0004 - 0.006 0.01 - 0.15
H 0.035 - 0.043 0.90 - 1.10
J 0.003 - 0.007 0.08 - 0.18
K 0.012 - 0.020 0.30 - 0.51
L 0.020 0.50
0.007 0.20 Suggested Solder Pad Layout

Note 1: Pulse Test: Pulse Width=300s, Duty Cycle2%.

Note 2: Guaranteed by Design, Not Subject to Production Testing.


2410010204_MCC-SI8810-TP_C669009.pdf

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