MCC SI5618 TP P Channel MOSFET Featuring UL 94 V0 Flammability Rating and Green Device Certification

Key Attributes
Model Number: SI5618-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
1.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@10V,1.5A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 P-Channel
Output Capacitance(Coss):
52pF
Pd - Power Dissipation:
830mW
Input Capacitance(Ciss):
-
Gate Charge(Qg):
-
Mfr. Part #:
SI5618-TP
Package:
SOT-23
Product Description

Product Overview

The SI5618 is a P-Channel MOSFET featuring an Advanced Trench Cell Design. It meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free and RoHS Compliant. This device is suitable for applications requiring reliable P-Channel MOSFET performance with a focus on safety and environmental compliance.

Product Attributes

  • Brand: MCC (Micro Commercial Components Corp.)
  • Model: SI5618
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Environmental Compliance: Halogen Free, Green Device, Lead Free Finish/RoHS Compliant
  • Packaging: Tape&Reel (3Kpcs/Reel or 10Kpcs/Reel)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS -60 V
Gate-Source Volltage VGS 20 V
Pulsed Drain Current IDM TA=25C -7.6 A
Total Power Dissipation PD TA=25C 0.83 W
Continuous Drain Current ID TA=100C -1.9 A
Operating Junction Temperature Range -55 +150 C
Storage Temperature Range -55 +150 C
Thermal Resistance Junction to Ambient RJA 150 C/W
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250A -60 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =20V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=-48V, VGS=0V -1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=-250A -1 -2 -3 V
Drain-Source On-Resistance RDS(on) VGS=-10V, ID=-1.5A 125 150 m
RDS(on) VGS=-4.5V, ID=-1A 165 200 m
Diode Forward Voltage VSD VGS=0V, IS=-1A -0.8 -1.4 V
Continuous Body Diode Current IS -1.9 A
Dynamic Characteristics
Input Capacitance Ciss VDS=-15V, VGS=0V, f=1MHz 580 pF
Output Capacitance Coss VDS=-15V, VGS=0V, f=1MHz 52 pF
Reverse Transfer Capacitance Crss VDS=-15V, VGS=0V, f=1MHz 35 pF
Total Gate Charge Qg VDS=-15V, VGEN=-10V, RG=3.3, RL=15, IDS=-1A 9.5 nC
Gate-Source Charge Qgs VDS=-15V, VGEN=-10V, RG=3.3, RL=15, IDS=-1A 1.52 nC
Gate-Drain Charge Qg VDS=-15V, VGEN=-10V, RG=3.3, RL=15, IDS=-1A 1.76 nC
Turn-On Delay Time td(on) VDS=-15V, VGEN=-10V, RG=3.3, RL=15, IDS=-1A 17.4 ns
Turn-On Rise Time tr VDS=-15V, VGEN=-10V, RG=3.3, RL=15, IDS=-1A 5.4 ns
Turn-Off Delay Time td(off) VDS=-15V, VGEN=-10V, RG=3.3, RL=15, IDS=-1A 37.2 ns
Turn-Off Fall Time tf VDS=-15V, VGEN=-10V, RG=3.3, RL=15, IDS=-1A 2.4 ns

2504101957_MCC-SI5618-TP_C17534161.pdf

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