MCC SI5618 TP P Channel MOSFET Featuring UL 94 V0 Flammability Rating and Green Device Certification
Product Overview
The SI5618 is a P-Channel MOSFET featuring an Advanced Trench Cell Design. It meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free and RoHS Compliant. This device is suitable for applications requiring reliable P-Channel MOSFET performance with a focus on safety and environmental compliance.
Product Attributes
- Brand: MCC (Micro Commercial Components Corp.)
- Model: SI5618
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Environmental Compliance: Halogen Free, Green Device, Lead Free Finish/RoHS Compliant
- Packaging: Tape&Reel (3Kpcs/Reel or 10Kpcs/Reel)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Volltage | VGS | 20 | V | |||
| Pulsed Drain Current | IDM | TA=25C | -7.6 | A | ||
| Total Power Dissipation | PD | TA=25C | 0.83 | W | ||
| Continuous Drain Current | ID | TA=100C | -1.9 | A | ||
| Operating Junction Temperature Range | -55 | +150 | C | |||
| Storage Temperature Range | -55 | +150 | C | |||
| Thermal Resistance Junction to Ambient | RJA | 150 | C/W | |||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -60 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS =20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-48V, VGS=0V | -1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1 | -2 | -3 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-10V, ID=-1.5A | 125 | 150 | m | |
| RDS(on) | VGS=-4.5V, ID=-1A | 165 | 200 | m | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A | -0.8 | -1.4 | V | |
| Continuous Body Diode Current | IS | -1.9 | A | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 580 | pF | ||
| Output Capacitance | Coss | VDS=-15V, VGS=0V, f=1MHz | 52 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-15V, VGS=0V, f=1MHz | 35 | pF | ||
| Total Gate Charge | Qg | VDS=-15V, VGEN=-10V, RG=3.3, RL=15, IDS=-1A | 9.5 | nC | ||
| Gate-Source Charge | Qgs | VDS=-15V, VGEN=-10V, RG=3.3, RL=15, IDS=-1A | 1.52 | nC | ||
| Gate-Drain Charge | Qg | VDS=-15V, VGEN=-10V, RG=3.3, RL=15, IDS=-1A | 1.76 | nC | ||
| Turn-On Delay Time | td(on) | VDS=-15V, VGEN=-10V, RG=3.3, RL=15, IDS=-1A | 17.4 | ns | ||
| Turn-On Rise Time | tr | VDS=-15V, VGEN=-10V, RG=3.3, RL=15, IDS=-1A | 5.4 | ns | ||
| Turn-Off Delay Time | td(off) | VDS=-15V, VGEN=-10V, RG=3.3, RL=15, IDS=-1A | 37.2 | ns | ||
| Turn-Off Fall Time | tf | VDS=-15V, VGEN=-10V, RG=3.3, RL=15, IDS=-1A | 2.4 | ns | ||
2504101957_MCC-SI5618-TP_C17534161.pdf
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