silicon n channel power mosfet Minos IRFP460 suitable for switching mode power supplies applications
Key Attributes
Model Number:
IRFP460
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
RDS(on):
280mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Output Capacitance(Coss):
290pF
Input Capacitance(Ciss):
1.92nF
Pd - Power Dissipation:
230W
Gate Charge(Qg):
56nC@10V
Mfr. Part #:
IRFP460
Package:
TO-247
Product Description
Product Overview
The IRFP460 is a silicon N-Channel Enhanced Power MOSFET, engineered with advanced technology to minimize conduction losses, enhance switching performance, and improve avalanche energy. This transistor is ideal for applications requiring high-frequency switching, such as SMPS (Switching Mode Power Supplies) and general-purpose power electronics.
Product Attributes
- Brand: mns-kx.com (Shenzhen Minos)
- Material: Silicon N-Channel
- Certifications: RoHS product
- Package: TO-247
Technical Specifications
| Parameter | Rating | Units | Test Conditions | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| General Features | ||||||
| VDS | 500 | V | ||||
| RDS(ON) | <280 | m | VGS=10V, ID=20A | 230 | ||
| Switching | Fast | |||||
| Crss | pF | 18 | ||||
| Avalanche Tested | 100% | |||||
| dv/dt capability | Improved | |||||
| Absolute Ratings | ||||||
| VDSS | 500 | V | @ TA=25 | |||
| ID Continuous Drain Current | 20 | A | @ TA=25 | |||
| ID Continuous Drain Current | 12.6 | A | TC = 100 C | |||
| IDM Pulsed Drain Current | 80 | A | (Note1) | |||
| VGS Gate-to-Source Voltage | 30 | V | ||||
| EAS Single Pulse Avalanche Energy | 1200 | mJ | (Note2) | |||
| dv/dt Peak Diode Recovery dv/dt | 5.0 | V/ns | (Note3) | |||
| PD Power Dissipation | 230 | W | TO-247 @ TA=25 | |||
| TJ, Tstg Operating Junction and Storage Temperature Range | 55 | 150 | ||||
| TL Maximum Temperature for Soldering | 300 | |||||
| Thermal Characteristics | ||||||
| RJC Junction-to-Case | /W | 0.54 | ||||
| RJA Junction-to-Ambient | /W | 62.5 | ||||
| OFF Characteristics | ||||||
| VDSS Drain to Source Breakdown Voltage | 500 | V | VGS=0V, ID=250A | |||
| BVDSS/ TJ Bvdss Temperature Coefficient | V/ | ID=250uA, Reference25 | 0.6 | |||
| IDSS Drain to Source Leakage Current | A | VDS =500V, VGS= 0V, Tj= 25 | 10 | |||
| IDSS Drain to Source Leakage Current | A | VDS =400V, VGS= 0V, Tj = 125 | 100 | |||
| IGSS(F) Gate to Source Forward Leakage | nA | VGS=+30V | 100 | |||
| IGSS(R) Gate to Source Reverse Leakage | nA | VGS=-30V | -100 | |||
| ON Characteristics | ||||||
| RDS(ON) Drain-to-Source On- Resistance | VGS=10V, ID=10A(Note4) | 0.23 | 0.28 | |||
| VGS(TH) Gate Threshold Voltage | V | VDS= VGS, ID = 250A(Note4) | 2.0 | 4.0 | ||
| gfs Forward Transconductance | S | VDS=20V, ID=10A(Note4) | 12 | |||
| Dynamic Characteristics | ||||||
| Rg Gate resistance | f = 1.0MHz | 1.5 | ||||
| Ciss Input Capacitance | pF | VGS= 0V, VDS = 25V, f = 1.0MHz | 1920 | |||
| Coss Output Capacitance | pF | 290 | ||||
| Crss Reverse Transfer Capacitance | pF | 18 | ||||
| Switching Characteristics | ||||||
| td(ON) Turn-on Delay Time | ns | ID=20A, VDD = 250V, VGS = 10V, RG =20 | 33 | |||
| tr Rise Time | ns | 75 | ||||
| td(OFF) Turn-Off Delay Time | ns | 91 | ||||
| tf Fall Time | ns | 83 | ||||
| Qg Total Gate Charge | nC | ID =20A, VDD=400V, VGS= 10V | 56 | |||
| Qgs Gate to Source Charge | nC | 13 | ||||
| Qgd Gate to Drain (Miller)Charge | nC | 20 | ||||
| Source-Drain Diode Characteristics | ||||||
| IS Continuous Source Current (Body Diode) | A | TC=25 C | 20 | |||
| ISM Maximum Pulsed Current (Body Diode) | A | 80 | ||||
| VSD Diode Forward Voltage | V | IS=20A, VGS=0V(Note4) | 1.2 | |||
| trr Reverse Recovery Time | ns | IS=20A, Tj = 25C, dIF/dt=100A/us, VGS=0V | 536 | |||
| Qrr Reverse Recovery Charge | nC | 5668 | ||||
| Irrm Reverse Recovery Current | A | 21.1 | ||||
2410122012_Minos-IRFP460_C22389973.pdf
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