Enhanced Silicon MOSFET Minos MLS65R380D with 650V VDS and 100 Percent Avalanche Testing Reliability
Key Attributes
Model Number:
MLS65R380D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-
RDS(on):
330mΩ@10V,3.8A
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
560pF
Input Capacitance(Ciss):
770pF@25V
Pd - Power Dissipation:
31W
Gate Charge(Qg):
21.8nC@10V
Mfr. Part #:
MLS65R380D
Package:
TO-252
Product Description
Product Description
The MLS65R380D is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This technology significantly reduces conduction losses and improves switching performance, making the transistor an ideal choice for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications. Key characteristics include a VDS of 650V, an ID of 11A, and an RDS(ON) of less than 0.33 at VGS=10V. It offers fast switching, 100% avalanche testing, and improved dv/dt capability.
Product Attributes
- Brand: MNS
- Origin: Shenzhen, China (implied by contact information)
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-to-Source Breakdown Voltage | VDSS | VGS=0V, ID=250A | 650 | V | ||
| Drain Current (continuous) | ID | at Tc=25 | 11 | A | ||
| Drain Current (pulsed) | IDM | 33 | A | |||
| Gate to Source Voltage | VGS | 20 | V | |||
| Total Dissipation | Ptot | at Tc=25 | 31 | W | ||
| Max. Operating Junction Temperature | Tj Max. | 150 | ||||
| Single Pulse Avalanche Energy | Eas | 250 | mj | |||
| Static Drain-to-Source on-Resistance | RDS(on) | VGS=10V,ID=3.8A | 0.33 | 0.38 | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, D=250A | 2 | 4 | V | |
| Drain-Source Leakage Current | IDSS | VDS=650V, VGS= 0V | 1.0 | A | ||
| Gate-Source Forward Leakage | IGSS(F) | VGS= +30V | 100 | nA | ||
| Gate-Source Reverse Leakage | IGSS(R) | VGS= -30V | -100 | nA | ||
| Input Capacitance | Ciss | VGS = 0V VDS = 25V f = 1.0MHz | 770 | pF | ||
| Output Capacitance | Coss | VGS = 0V VDS = 25V f = 1.0MHz | 560 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0V VDS = 25V f = 1.0MHz | 25 | pF | ||
| Total Gate Charge | Qg | ID =4.8A VDD =520V VGS = 10V | 21.8 | nC | ||
| Gate-Source Charge | Qgs | ID =4.8A VDD =520V VGS = 10V | 4.5 | nC | ||
| Gate-Drain Charge | Qgd | ID =4.8A VDD =520V VGS = 10V | 8 | nC | ||
| Turn-on Delay Time | td(on) | ID =4.8A VDD =400V VGS =10V VRG=5 | 11 | nS | ||
| Turn-on Rise Time | tr | ID =4.8A VDD =400V VGS =10V VRG=5 | 9 | nS | ||
| Turn-off Delay Time | td(off) | ID =4.8A VDD =400V VGS =10V VRG=5 | 38 | nS | ||
| Turn-off Fall Time | tf | ID =4.8A VDD =400V VGS =10V VRG=5 | 8 | nS | ||
| Continuous Source Current (Body Diode) | IS | TC=25 C | -- | -- | 11 | A |
| Maximum Pulsed Current (Body Diode) | ISM | -- | -- | 33 | A | |
| Diode Forward Voltage | VSD | IS=4.8A, VGS=0V(Note4) | -- | -- | 0.9 | V |
| Reverse Recovery Time | Trr | IS=4.8A, Tj = 25C dIF/dt=100A/us, VGS=0V | -- | 285 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=4.8A, Tj = 25C dIF/dt=100A/us, VGS=0V | -- | 3135 | -- | nC |
| Reverse Recovery Current | Irrm | IS=4.8A, Tj = 25C dIF/dt=100A/us, VGS=0V | -- | 22 | -- | A |
2411120955_Minos-MLS65R380D_C19272227.pdf
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