MCC SI1012 TP N Channel MOSFET featuring halogen free and lead free epoxy package with ESD protection
Product Overview
The SI1012 is an N-Channel MOSFET designed for various applications. It features a low threshold voltage, ESD protected gate, and is housed in a SOT-523 package. The epoxy material meets UL 94 V-0 flammability rating and it offers Moisture Sensitivity Level 1. This MOSFET is available in Halogen Free and Lead Free/RoHS Compliant options. It is suitable for applications requiring efficient switching and low power dissipation.
Product Attributes
- Brand: MCC (Micro Commercial Components)
- Model: SI1012
- Package: SOT-523
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Certifications: RoHS Compliant (indicated by "P" suffix)
- Availability: Halogen Free Available (by adding "-HF" suffix)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C (Note 2) | 0.5 | A | ||
| Pulsed Drain Current (Note 1) | IDM | TA=25°C (Note 2) | 1 | A | ||
| Total Power Dissipation | PD | TC=25°C (Note 3) | 275 | mW | ||
| Operating Junction Temperature Range | -55 | +150 | °C | |||
| Storage Temperature Range | -55 | +150 | °C | |||
| Thermal Resistance (Junction to Ambient) | 833 | °C/W | ||||
| Thermal Resistance (Junction to Case) | 455 | °C/W | ||||
| Electrical Characteristics @ 25°C (Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250µA | 20 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS = ±4.5V | ±1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=16V, VGS=0V | 100 | nA | ||
| Gate-Threshold Voltage (Note 4) | VGS(th) | VDS=VGS, ID=250µA | 0.45 | 0.8 | 1.2 | V |
| Drain-Source On-Resistance (Note 4) | RDS(on) | VGS=4.5V, ID=600mA | 250 | 700 | mΩ | |
| Drain-Source On-Resistance (Note 4) | RDS(on) | VGS=2.5V, ID=500mA | 330 | 850 | mΩ | |
| Forward Tranconductance | gFS | VDS=10V, ID=400mA | 1 | S | ||
| Dynamic Characteristics (Note 5) | ||||||
| Input Capacitance | Ciss | VDS=10V,VGS=4.5V,ID=250mA | 100 | pF | ||
| Output Capacitance | Coss | VDS=16V,VGS=0V,f=1MHz | 16 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=16V,VGS=0V,f=1MHz | 12 | pF | ||
| Total Gate Charge | Qg | VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω | 750 | nC | ||
| Gate-Source Charge | Qgs | VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω | 75 | nC | ||
| Gate-Drain Charge | Qgd | VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω | 225 | nC | ||
| Turn-On Delay Time | td(on) | VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω | 5 | ns | ||
| Turn-On Rise Time | tr | VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω | 5 | ns | ||
| Turn-Off Delay Time | td(off) | VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω | 25 | ns | ||
| Turn-Off Fall Time | tf | VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω | 11 | ns | ||
| Body Diode Characteristics (Note 4) | ||||||
| Body Diode Voltage | VSD | IS=0.15A, VGS=0V | 1.2 | V | ||
Dimensions (SOT-523)
| DIM | INCHES | MM |
|---|---|---|
| A | 0.059 - 0.067 | 1.50 - 1.70 |
| B | 0.057 - 0.069 | 1.45 - 1.75 |
| C | 0.030 - 0.033 | 0.75 - 0.85 |
| D | ||
| E | 0.035 - 0.043 | 0.90 - 1.10 |
| G | 0.000 - 0.004 | 0.00 - 0.10 |
| H | 0.024 - 0.031 | 0.60 - 0.80 |
| J | 0.004 - 0.008 | 0.10 - 0.20 |
| K | 0.006 - 0.014 | 0.15 - 0.35 |
Suggested Solder Pad Layout
| TYP. (mm) | 1.0 | 0.4 | 0.6 | 0.6 | 1.24 | 0.5 |
|---|---|---|---|---|---|---|
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| SI1012 | Tape&Reel: 3Kpcs/Reel | -TP |
Note: Add "-HF" suffix for Halogen Free option (e.g., Part Number-TP-HF).
2008031237_MCC-SI1012-TP_C668994.pdf
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