MCC SI1012 TP N Channel MOSFET featuring halogen free and lead free epoxy package with ESD protection

Key Attributes
Model Number: SI1012-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
250mΩ@4.5V,600mA
Gate Threshold Voltage (Vgs(th)):
450mV
Reverse Transfer Capacitance (Crss@Vds):
12pF@16V
Number:
1 N-channel
Input Capacitance(Ciss):
100pF@16V
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
750nC@4.5V
Mfr. Part #:
SI1012-TP
Package:
SOT-523
Product Description

Product Overview

The SI1012 is an N-Channel MOSFET designed for various applications. It features a low threshold voltage, ESD protected gate, and is housed in a SOT-523 package. The epoxy material meets UL 94 V-0 flammability rating and it offers Moisture Sensitivity Level 1. This MOSFET is available in Halogen Free and Lead Free/RoHS Compliant options. It is suitable for applications requiring efficient switching and low power dissipation.

Product Attributes

  • Brand: MCC (Micro Commercial Components)
  • Model: SI1012
  • Package: SOT-523
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Certifications: RoHS Compliant (indicated by "P" suffix)
  • Availability: Halogen Free Available (by adding "-HF" suffix)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current ID TA=25°C (Note 2) 0.5 A
Pulsed Drain Current (Note 1) IDM TA=25°C (Note 2) 1 A
Total Power Dissipation PD TC=25°C (Note 3) 275 mW
Operating Junction Temperature Range -55 +150 °C
Storage Temperature Range -55 +150 °C
Thermal Resistance (Junction to Ambient) 833 °C/W
Thermal Resistance (Junction to Case) 455 °C/W
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA 20 V
Gate-Source Leakage Current IGSS VDS=0V, VGS = ±4.5V ±1 µA
Zero Gate Voltage Drain Current IDSS VDS=16V, VGS=0V 100 nA
Gate-Threshold Voltage (Note 4) VGS(th) VDS=VGS, ID=250µA 0.45 0.8 1.2 V
Drain-Source On-Resistance (Note 4) RDS(on) VGS=4.5V, ID=600mA 250 700
Drain-Source On-Resistance (Note 4) RDS(on) VGS=2.5V, ID=500mA 330 850
Forward Tranconductance gFS VDS=10V, ID=400mA 1 S
Dynamic Characteristics (Note 5)
Input Capacitance Ciss VDS=10V,VGS=4.5V,ID=250mA 100 pF
Output Capacitance Coss VDS=16V,VGS=0V,f=1MHz 16 pF
Reverse Transfer Capacitance Crss VDS=16V,VGS=0V,f=1MHz 12 pF
Total Gate Charge Qg VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω 750 nC
Gate-Source Charge Qgs VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω 75 nC
Gate-Drain Charge Qgd VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω 225 nC
Turn-On Delay Time td(on) VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω 5 ns
Turn-On Rise Time tr VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω 5 ns
Turn-Off Delay Time td(off) VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω 25 ns
Turn-Off Fall Time tf VDD=10V, RL=47Ω, ID=200mA, VGS=4.5V,RG=10Ω 11 ns
Body Diode Characteristics (Note 4)
Body Diode Voltage VSD IS=0.15A, VGS=0V 1.2 V

Dimensions (SOT-523)

DIM INCHES MM
A 0.059 - 0.067 1.50 - 1.70
B 0.057 - 0.069 1.45 - 1.75
C 0.030 - 0.033 0.75 - 0.85
D
E 0.035 - 0.043 0.90 - 1.10
G 0.000 - 0.004 0.00 - 0.10
H 0.024 - 0.031 0.60 - 0.80
J 0.004 - 0.008 0.10 - 0.20
K 0.006 - 0.014 0.15 - 0.35

Suggested Solder Pad Layout

TYP. (mm) 1.0 0.4 0.6 0.6 1.24 0.5

Ordering Information

Device Packing Part Number
SI1012 Tape&Reel: 3Kpcs/Reel -TP

Note: Add "-HF" suffix for Halogen Free option (e.g., Part Number-TP-HF).


2008031237_MCC-SI1012-TP_C668994.pdf

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