N Channel Power MOSFET Minos IRLR024NTR 60V with Low Gate Charge and High Energy Avalanche Capability
Key Attributes
Model Number:
IRLR024NTR
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+175℃
RDS(on):
40mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.3V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
44W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
IRLR024NTR
Package:
TO-252
Product Description
Product Overview
The IRLR024NTR is a 60V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design contributes to lower RDSon, and it is fully characterized for avalanche voltage and current, ensuring good stability and uniformity with high EAS. The TO-252 package provides excellent heat dissipation.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Origin: Shenzhen Minos (derived from contact information)
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 30 | A | |||
| Drain Current-Pulsed | IDM | Note 1 | 80 | A | ||
| Maximum Power Dissipation | PD | Tc=25℃ | 44 | W | ||
| Single pulse avalanche energy | EAS | Note 2 | 56 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | ||
| Thermal Resistance,Junction-to-Case | RθJC | 3.4 | ℃/W | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 1.3 | 1.8 | 2.3 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=10A, Note 3 | 25 | 30 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=10A, Note 3 | 30 | 40 | mΩ | |
| Forward Transconductance | gFS | VDS=5V,ID=10A | 11 | S | ||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | 670 | pF | ||
| Output Capacitance | Coss | VDS=25V,VGS=0V, f=1.0MHz | 76 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, f=1.0MHz | 66 | pF | ||
| Turn-on Delay Time | td(on) | VDD=30V, ID=10A, VGS=10V,RGEN=10Ω, Note 4 | 19.2 | nS | ||
| Turn-on Rise Time | tr | VDD=30V, ID=10A, VGS=10V,RGEN=10Ω, Note 4 | 6.4 | nS | ||
| Turn-Off Delay Time | td(off) | VDD=30V, ID=10A, VGS=10V,RGEN=10Ω, Note 4 | 29.2 | nS | ||
| Turn-Off Fall Time | tf | VDD=30V, ID=10A, VGS=10V,RGEN=10Ω, Note 4 | 8.2 | nS | ||
| Total Gate Charge | Qg | VDS=48V,ID=10A, VGS=10V | 21 | nC | ||
| Gate-Source Charge | Qgs | VDS=48V,ID=10A, VGS=10V | 5 | nC | ||
| Gate-Drain Charge | Qg d | VDS=48V,ID=10A, VGS=10V | 6.5 | nC | ||
| Diode Forward Voltage | VSD | VGS=0V,IS=20A, Note 3 | 1.2 | V | ||
| Reverse Recovery Time | Trr | Tj=25℃,IF=10A,di/dt=100A/uS, Note 3 | 33.6 | nS | ||
| Reverse Recovery Charge | Qrr | Tj=25℃,IF=10A,di/dt=100A/uS, Note 3 | 32.1 | nC |
2410122012_Minos-IRLR024NTR_C20624234.pdf
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