Silicon N Channel Power MOSFET Minos MD20N50 with Low Conduction Resistance and Fast Switching Speed
Key Attributes
Model Number:
MD20N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
RDS(on):
280mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Output Capacitance(Coss):
290pF
Input Capacitance(Ciss):
1.92nF
Pd - Power Dissipation:
230W
Gate Charge(Qg):
83nC@10V
Mfr. Part #:
MD20N50
Package:
TO-247
Product Description
Product Description
The MD20N50 is a silicon N-Channel Enhanced Power MOSFET designed using advanced technology to reduce conduction loss, improve switching performance, and enhance avalanche energy. It is suitable for applications such as Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose use. Key advantages include low conduction resistance, fast switching speeds, low Crss, 100% avalanche tested, and improved dv/dt capability.
Product Attributes
- Brand: MNS-KX
- Material: Silicon N-Channel
- Certifications: RoHS product
Technical Specifications
| Parameter | Rating | Units | Conditions | Min. | Typ. | Max. |
| General Features | ||||||
| VDS | 500 | V | ||||
| RDS(ON) | 280 | m | VGS=10V, ID=20A | 230 | ||
| Switching | Fast | |||||
| Crrs | 18 | pF | Typical | |||
| Avalanche Tested | 100% | |||||
| dv/dt capability | Improved | |||||
| Applications | ||||||
| High frequency switching mode power supply | Yes | |||||
| Absolute Ratings | ||||||
| VDSS | 500 | V | @ Ta=25 | |||
| ID Continuous Drain Current | 20 | A | @ Ta=25 | |||
| ID Continuous Drain Current | 12.6 | A | TC = 100 C | |||
| IDM Pulsed Drain Current | 80 | A | (Note1) | |||
| VGS Gate-to-Source Voltage | 30 | V | ||||
| EAS Single Pulse Avalanche Energy | 1200 | mJ | (Note2) | |||
| dv/dt Peak Diode Recovery dv/dt | 5.0 | V/ns | (Note3) | |||
| PD Power Dissipation (TO-220, TO-3PN) | 230 | W | ||||
| PD Power Dissipation (TO-220F, TO-3PF) | 48 | W | ||||
| TJ, Tstg Operating Junction and Storage Temperature Range | -55 to 150 | |||||
| TL Maximum Temperature for Soldering | 300 | |||||
| Thermal Characteristics (No FullPAK) | ||||||
| RJC Junction-to-Case | 0.54 | /W | ||||
| RJA Junction-to-Ambient | 62.5 | /W | ||||
| Thermal Characteristics (FullPAK) | ||||||
| RJC Junction-to-Case | 2.6 | /W | ||||
| RJA Junction-to-Ambient | 62.5 | /W | ||||
| OFF Characteristics | ||||||
| VDSS Drain to Source Breakdown Voltage | 500 | V | VGS=0V, ID=250A | |||
| BVDSS/ TJ Bvdss Temperature Coefficient | V/ | ID=250uA, Reference25 | 0.6 | |||
| IDSS Drain to Source Leakage Current | 10 | A | VDS=500V, VGS= 0V, Tj = 25 | |||
| IDSS Drain to Source Leakage Current | 100 | A | VDS=400V, VGS= 0V, Tj = 125 | |||
| IGSS(F) Gate to Source Forward Leakage | 100 | nA | VGS=+30V | |||
| IGSS(R) Gate to Source Reverse Leakage | -100 | nA | VGS=-30V | |||
| ON Characteristics | ||||||
| RDS(ON) Drain-to-Source On- Resistance | 0.28 | VGS=10V, ID=10A(Note4) | 0.23 | |||
| VGS(TH) Gate Threshold Voltage | 4.0 | V | VDS = VGS, ID = 250A(Note4) | 2.0 | ||
| gfs Forward Transconductance | 12 | S | VDS=20V, ID =10A(Note4) | |||
| Dynamic Characteristics | ||||||
| Rg Gate resistance | 1.5 | f = 1.0MHz | ||||
| Ciss Input Capacitance | 1920 | pF | VGS = 0V VDS = 25V f = 1.0MHz | |||
| Coss Output Capacitance | 290 | pF | ||||
| Crrs Reverse Transfer Capacitance | 18 | pF | ||||
| Switching Characteristics | ||||||
| td(ON) Turn-on Delay Time | 33 | ns | ID=20A VDD= 250V VGS = 10V RG =20 | |||
| tr Rise Time | 75 | ns | ||||
| td(OFF) Turn-Off Delay Time | 91 | ns | ||||
| tf Fall Time | 83 | ns | ||||
| Qg Total Gate Charge | 56 | nC | ID =20A VDD=400V VGS = 10V | |||
| Qgs Gate to Source Charge | 13 | nC | ||||
| Qgd Gate to Drain (Miller)Charge | 20 | nC | ||||
| Source-Drain Diode Characteristics | ||||||
| IS Continuous Source Current (Body Diode) | 20 | A | TC=25 C | |||
| ISM Maximum Pulsed Current (Body Diode) | 80 | A | ||||
| VSD Diode Forward Voltage | 1.2 | V | IS=20A, VGS=0V(Note4) | |||
| trr Reverse Recovery Time | 536 | ns | IS=20A, Tj = 25C dIF/dt=100A/us, VGS=0V | |||
| Qrr Reverse Recovery Charge | 5668 | nC | ||||
| Irrm Reverse Recovery Current | 21.1 | A | ||||
2410122012_Minos-MD20N50_C2980279.pdf
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