60 Volt Drain Source Breakdown N Channel FET MCC SI2310B TP with Moisture Sensitivity Level 1 Rating
Key Attributes
Model Number:
SI2310B-TP
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
105mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
19.5pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
247pF@30V
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
SI2310B-TP
Package:
SOT-23
Product Description
Product Overview
The SI2310B is an N-Channel Enhancement Mode Field Effect Transistor in a SOT-23 package. It offers features such as Lead Free Finish/RoHS Compliant, Epoxy Meets UL 94 V-0 Flammability Rating, and Moisture Sensitivity Level 1. This transistor is suitable for applications requiring a drain-source breakdown voltage of 60V and a continuous drain current of up to 3.0A.
Product Attributes
- Brand: MCCSEMI.COM
- Package Type: SOT-23
- Certifications: RoHS Compliant (P Suffix), Halogen Free Available (Suffix -HF)
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 60 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current | ID | 3.0 | A | |||
| Total Power Dissipation | PD | Device Mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch | 1.2 | W | ||
| Pulsed Drain Current | IDM | Note 2. Repetitive Rating : Pulse Width Limited by Junction Temperature. | A | |||
| Operating Junction Temperature Range | -55 | 150 | C | |||
| Storage Temperature Range | -55 | 150 | C | |||
| Thermal Resistance Junction to Ambient | RthJA | Note 1. Device Mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. | 105 | C/W | ||
| Gate-Source Leakage Current | IGSS | VDS =15V, ID =2A | 50 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =60V, VGS =0V | 1 | A | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 0.5 | 1.3 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=3A | 105 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=3A | 125 | m | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=3A | 1.2 | V | ||
| Forward Tranconductance | gFS | VDS=15V, ID =2A | 1.4 | S | ||
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f =1MHz | 247 | pF | ||
| Output Capacitance | Coss | VDS=30V,VGS=0V,f =1MHz | 34 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=30V,VGS=0V,f =1MHz | 19.5 | pF | ||
| Total Gate Charge | Qg | VDS=30V,VGS=4.5V,ID=3A | 6 | nC | ||
| Gate-Source Charge | Qgs | VDS=30V,VGS=4.5V,ID=3A | 1 | nC | ||
| Gate-Drain Charge | Qg | VDS=30V,VGS=4.5V,ID=3A | 1.3 | nC | ||
| Turn-On Delay Time | td(on) | VGS=10V,VDD=30V,ID=1.5A, RGEN=1 | 6 | ns | ||
| Turn-On Rise Time | tr | VGS=10V,VDD=30V,ID=1.5A, RGEN=1 | 15 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=10V,VDD=30V,ID=1.5A, RGEN=1 | 15 | ns | ||
| Turn-Off Fall Time | tf | VGS=10V,VDD=30V,ID=1.5A, RGEN=1 | 10 | ns |
Ordering Information:
- Device: SI2310B
- Packing: Tape&Reel (3Kpcs/Reel)
- Part Number: Part Number-TP
- Note: Add "-HF" Suffix for Halogen Free, e.g., Part Number-TP-HF
2410010204_MCC-SI2310B-TP_C668999.pdf
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