Trench Power LV MOSFET MCC MCG30N03A TP with low RDS ON resistance and UL 94 V 0 flammability rating

Key Attributes
Model Number: MCG30N03A-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
8mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
126pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.02nF@15V
Pd - Power Dissipation:
-
Gate Charge(Qg):
28nC@10V
Mfr. Part #:
MCG30N03A-TP
Package:
DFN3333
Product Description

Product Overview

The MCG30N03A is an N-channel MOSFET featuring a high-density cell design for low RDS(ON) and Trench Power LV MOSFET technology. It offers excellent package performance for heat dissipation, meeting UL 94 V-0 flammability rating and Moisture Sensitivity Level 1. This MOSFET is designed for applications requiring efficient power management and is available with a lead-free finish and RoHS compliance. Halogen-free options are available upon request.

Product Attributes

  • Brand: MCCSEMI
  • Technology: Trench Power LV MOSFET
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • Availability: Halogen Free (Suffix "-HF"), Lead Free/RoHS Compliant (Suffix "P")

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 30 V
Gate-Source Leakage Current IGSS VDS =0V, VGS =20V 100 nA
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 1 1.5 2.5 V
Drain-Source On-Resistance RDS(on) VGS=10V, ID=15A 8 10 m
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=15A 10 13 m
Diode Forward Voltage VSD VGS=0V, IS=15A 0.85 1.2 V
Maximum Body-Diode Continuous Current IS 30 A
Input Capacitance Ciss VDS=15V,VGS=10V,ID=30A 1020 pF
Output Capacitance Coss VDS=15V,VGS=10V,ID=30A 225 pF
Reverse Transfer Capacitance Crss VDS=15V,VGS=10V,ID=30A 126 pF
Total Gate Charge Qg VDS=15V,VGS=10V,ID=30A 28 nC
Gate-Source Charge Qgs VDS=15V,VGS=10V,ID=30A 7 nC
Gate-Drain Charge Qg VDS=15V,VGS=10V,ID=30A 5 nC
Reverse Recovery Charge Qrr IF=15A, di/dt=100A/s 25 nC
Reverse Recovery Time trr IF=15A, di/dt=100A/s 26 ns
Turn-On Delay Time td(on) VGS=10V,VDS=20V,ID=2A, RL=1, RGEN=3 8 ns
Turn-On Rise Time tr VGS=10V,VDS=20V,ID=2A, RL=1, RGEN=3 15 ns
Turn-Off Delay Time td(off) VGS=10V,VDS=20V,ID=2A, RL=1, RGEN=3 27 ns
Turn-Off Fall Time tf VGS=10V,VDS=20V,ID=2A, RL=1, RGEN=3 7 ns
Continuous Drain Current ID TC=25C 30 A
Continuous Drain Current ID TC=100C 21 A
Pulsed Drain Current IDM TC=25C (Note2) 100 A
Total Power Dissipation PD TC=25C (Note1) 20 W
Total Power Dissipation PD TC=100C (Note1) 10 W
Maximum Thermal Resistance RthJC Junction to Case (Note1) 7.5 C/W
Operating Junction Temperature Range TJ -55 +175 C
Storage Temperature Range TSTG -55 +175 C
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Single Pulse Avalanche Energy EAS (Note3) 128 mJ

Dimensions (DFN3333)

Symbol MIN (INCHES) MAX (INCHES) MIN (MM) MAX (MM)
A 0.126 0.130 3.20 3.30
B 0.126 0.130 3.20 3.30
C 0.030 0.033 0.75 0.85
C1 0.007 0.009 0.18 0.22
C2 --- 0.002 --- 0.05
D 0.071 0.079 1.80 2.00
E 0.087 0.098 2.20 2.50
F 0.010 0.014 0.25 0.35
G 0.012 0.016 0.30 0.40
H 0.024 0.028 0.60 0.70
e 0.016 0.020 0.40 0.50

Ordering Information

Device Packing Part Number
MCG30N03A Tape&Reel: 3Kpcs/Reel [Part Number]-TP
Halogen Free [Part Number]-TP-HF

2008031236_MCC-MCG30N03A-TP_C668959.pdf

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