High Voltage Silicon N Channel MOSFET Minos K2698 MNS with Low Conduction Loss and Avalanche Tested
Key Attributes
Model Number:
K2698-MNS
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
RDS(on):
230mΩ@10V,10A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
18pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
48W
Input Capacitance(Ciss):
1.92nF@25V
Gate Charge(Qg):
56nC@10V
Mfr. Part #:
K2698-MNS
Package:
TO-3P
Product Description
Product Description
The K2698-MNS is a silicon N-Channel Enhanced Power MOSFET utilizing advanced MOSFET technology to reduce conduction loss, improve switching performance, and enhance avalanche energy. This transistor is well-suited for SMPS, high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS
- Origin: Shenzhen Minos Technology Co., Ltd.
- Material: Silicon
- Certifications: RoHS product
Technical Specifications
| Parameter | Rating | Units | Conditions | Min. | Typ. | Max. |
| General Features | ||||||
| VDS | 500 | V | ||||
| RDS(ON) | <280 | m | VGS=10V, ID=20A | 230 | ||
| Fast Switching | ||||||
| Low Crss | 18 | pF | (typical) | |||
| 100% avalanche tested | ||||||
| Improved dv/dt capability | ||||||
| RoHS product | ||||||
| Absolute Ratings @ Ta=25 (unless otherwise specified) | ||||||
| VDSS | 500 | V | ||||
| ID Continuous Drain Current | 20 | A | ||||
| ID Continuous Drain Current | 12.6 | A | TC= 100 C | |||
| IDM Pulsed Drain Current(Note1) | 80 | A | ||||
| VGS Gate-to-Source Voltage | 30 | V | ||||
| EAS Single Pulse Avalanche Energy(Note2) | 1200 | mJ | ||||
| dv/dt Peak Diode Recovery dv/dt(Note3) | 5.0 | V/ns | ||||
| PD Power Dissipation (TO-220, TO-3PN) | 230 | W | ||||
| Derating Factor above 25C | 1.85 | W/ | ||||
| PD Power Dissipation (TO-220F, TO-3PF) | 48 | W | ||||
| Derating Factor above 25C | 0.38 | W/ | ||||
| TJTstg Operating Junction and Storage Temperature Range | 15055 to 150 | 55 | 150 | |||
| TL Maximum Temperature for Soldering | 300 | |||||
| Thermal Characteristics (No FullPAK) | ||||||
| RJC Junction-to-Case | 0.54 | /W | ||||
| RJA Junction-to-Ambient | 62.5 | /W | ||||
| Thermal Characteristics (FullPAK) | ||||||
| RJC Junction-to-Case | 2.6 | /W | ||||
| RJA Junction-to-Ambient | 62.5 | /W | ||||
| Electrical Characteristics at TC= 25C, unless otherwise specified | ||||||
| OFF Characteristics | ||||||
| VDSS Drain to Source Breakdown Voltage | 500 | V | VGS=0V, ID=250A | |||
| BVDSS/ TJ Bvdss Temperature Coefficient | 0.6 | V/ | ID=250uA, Reference25 | |||
| IDSS Drain to Source Leakage Current | 10 | A | VDS =500V, VGS= 0V, Tj = 25 | |||
| IDSS Drain to Source Leakage Current | 100 | A | VDS=400V, VGS= 0V, Tj = 125 | |||
| IGSS(F) Gate to Source Forward Leakage | 100 | nA | VGS =+30V | |||
| IGSS(R) Gate to Source Reverse Leakage | -100 | nA | VGS =-30V | |||
| ON Characteristics | ||||||
| RDS(ON) Drain-to-Source On- Resistance | 0.28 | VGS=10V, ID=10A(Note4) | 0.23 | |||
| VGS(TH) Gate Threshold Voltage | 4.0 | V | VDS= VGS, ID = 250A(Note4) | 2.0 | ||
| gfs Forward Transconductance | 12 | S | VDS=20V, ID =10A(Note4) | |||
| Dynamic Characteristics | ||||||
| Rg Gate resistance | 1.5 | f = 1.0MHz | ||||
| Ciss Input Capacitance | 1920 | pF | VGS = 0V VDS = 25V f = 1.0MHz | |||
| Coss Output Capacitance | 290 | pF | ||||
| Crss Reverse Transfer Capacitance | 18 | pF | ||||
| Switching Characteristics | ||||||
| td(ON) Turn-on Delay Time | 33 | ns | ID =20A VDD = 250V VGS = 10V RG=20 | |||
| tr Rise Time | 75 | ns | ||||
| td(OFF) Turn-Off Delay Time | 91 | ns | ||||
| tf Fall Time | 83 | ns | ||||
| Qg Total Gate Charge | 56 | nC | ID =20A VDD=400V VGS = 10V | |||
| Qgs Gate to Source Charge | 13 | nC | ||||
| Qgd Gate to Drain (Miller)Charge | 20 | nC | ||||
| Source-Drain Diode Characteristics | ||||||
| IS Continuous Source Current (Body Diode) | 20 | A | TC=25C | |||
| ISM Maximum Pulsed Current (Body Diode) | 80 | A | ||||
| VSD Diode Forward Voltage | 1.2 | V | IS=20A, VGS=0V(Note4) | |||
| trr Reverse Recovery Time | 536 | ns | IS=20A, Tj = 25C dIF/dt=100A/us, VGS=0V | |||
| Qrr Reverse Recovery Charge | 5668 | nC | ||||
| Irrm Reverse Recovery Current | 21.1 | A | ||||
2412110943_Minos-K2698-MNS_C42411364.pdf
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