Plastic encapsulated NPN transistor MDD Microdiode Semiconductor S9013-E with high collector current
Key Attributes
Model Number:
S9013-E
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S9013-E
Package:
SOT-23
Product Description
Product Overview
The S9013-E is an NPN plastic-encapsulated transistor in a SOT-23 package. It features high collector current, complementary to the S9012, and excellent hFE linearity. This transistor is suitable for various electronic applications.
Product Attributes
- Brand: Microdiode
- Package Type: SOT-23
- Transistor Type: NPN
- Complementary To: S9012
- Marking: J3
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current-Continuous | IC | 0.5 | A | |||
| Collector Power Dissipation | PC | Ta=25 | 0.3 | W | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=100A, IE=0 | 40 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=1mA, IB=0 | 25 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector Cut-off Current | ICBO | VCB=40V, IE=0 | 0.1 | A | ||
| Emitter Cut-off Current | IEBO | VEB=5V, IC=0 | 0.1 | A | ||
| DC Current Gain | hFE | VCE=1V, IC=50mA | 120 | 400 | ||
| Rank L | 120 | 200 | ||||
| Rank H | 200 | 350 | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=500mA, IB=50mA | 0.8 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=500mA, IB=50mA | 1.4 | V | ||
| Transition Frequency | fT | VCE=6V, IC=20mA, f=30MHz | 150 | MHz | ||
| Collector Cut-off Current | ICEO | VCB=20V, IE=0 | 0.1 | A | ||
| Thermal Resistance | RJA | Junction To Ambient | 416 | /W | ||
| Collector Output Capacitance | Cob | VCB=6V, IE=0, f=1MHz | 8 | pF | ||
| Base-Emitter Voltage | VBE | VCB=1V, IC=10mA | 0.7 | V |
2411131351_MDD-Microdiode-Semiconductor-S9013-E_C41371419.pdf
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