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quality MDD Microdiode Semiconductor MMBT3904-1AM RANGE 100-300 NPN Transistor Compact SOT-23 Package Design factory
quality MDD Microdiode Semiconductor MMBT3904-1AM RANGE 100-300 NPN Transistor Compact SOT-23 Package Design factory

MDD Microdiode Semiconductor MMBT3904-1AM RANGE 100-300 NPN Transistor Compact SOT-23 Package Design

Key Attributes
Model Number: MMBT3904-1AM(RANGE:100-300)
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT3904-1AM(RANGE:100-300)
Package:
SOT-23
Product Description

MMBT3904 Transistor (NPN)

The MMBT3904 is a general-purpose NPN transistor in a SOT-23 package, suitable for a wide range of electronic applications. Its epitaxial planar die construction ensures reliable performance. The complementary PNP type, MMBT3906, is also recommended for complementary circuit designs.

Product Attributes

  • Brand: Microdiode
  • Package: SOT-23
  • Construction: Epitaxial Planar Die

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 200 mA
Collector Power Dissipation PC (Ta=25 unless otherwise noted) 200 mW
Thermal Resistance Junction To Ambient RJA 625 /W
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
Collector-base breakdown voltage V(BR)CBO IC=10A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6 V
Collector cut-off current ICEX CE V =30V, VEB(off)=3V 50 nA
Collector cut-off current ICBO CB V = 60V, IE=0 100 nA
Emitter cut-off current IEBO EB V =5V, IC=0 100 nA
DC current gain hFE VCE=1V, IC=10mA 100
DC current gain hFE VCE=1V, IC=50mA 100
DC current gain hFE VCE=1V, IC=100mA 300
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 0.95 V
Transition frequency fT CE V =20V,IC=10mA, f=100MHz 300 MHz
Delay time td VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA 35 ns
Rise time tr VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA 35 ns
Storage time ts CC V =3V, IC=10mA, IB1= IB2=1mA 200 ns
Fall time tf CC V =3V, IC=10mA, IB1= IB2=1mA 50 ns

2411211939_MDD-Microdiode-Semiconductor-MMBT3904-1AM-RANGE-100-300_C364310.pdf

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