MDD Microdiode Semiconductor MMBT2222A transistor NPN type for versatile electronic applications
Key Attributes
Model Number:
MMBT2222A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT2222A
Package:
SOT-23
Product Description
Product Overview
The MMBT2222A is an NPN epitaxial planar die construction transistor designed for general-purpose applications. It offers complementary PNP type availability with the MMBT2907A.
Product Attributes
- Brand: Microdiode
- Model: MMBT2222A
- Package Type: SOT-23
- Transistor Type: NPN
- Complementary PNP Type: MMBT2907A
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC = 10A, IE=0 | 75 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 10mA, IB=0 | 40 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE =10A, IC=0 | 6 | V | ||
| Collector Cut-off Current | ICBO | VCB =60V, IE=0 | 0.01 | A | ||
| Collector Cut-off Current | ICEX | VCE =30V,VBE(off)=3V | 0.01 | A | ||
| Emitter Cut-off Current | IEBO | VEB = 3V, IC=0 | 0.1 | A | ||
| DC Current Gain (hFE) | hFE(1) | VCE =10V, IC= 150mA | 100 | 300 | ||
| DC Current Gain (hFE) | hFE(2) | VCE =10V, IC= 0.1mA | 40 | |||
| DC Current Gain (hFE) | hFE(3) | VCE =10V, IC= 500mA | 42 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=500 mA, IB= 50mA | 0.3 | 1 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=150 mA, IB=15mA | 0.2 | 0.3 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | IC=500 mA, IB= 50mA | 1.2 | 2.0 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | IC=150 mA, IB=15mA | 0.95 | 1.2 | V | |
| Transition Frequency | fT | VCE=20V, IC= 20mA, f=100MHz | 300 | MHz | ||
| Delay Time | td | VCC=30V, V BE(off)=-0.5V IC=150mA , IB1= 15mA | 10 | ns | ||
| Rise Time | tr | 25 | ns | |||
| Storage Time | tS | VCC=30V, IC =150mA IB1=-IB2=15mA | 60 | ns | ||
| Fall Time | tf | 225 | ns | |||
| Collector Power Dissipation | PC | Ta=25 | 300 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | 417 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 |
2411211939_MDD-Microdiode-Semiconductor-MMBT2222A_C364315.pdf
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