MDD Microdiode Semiconductor BC807-40 PNP Bipolar Transistor Designed for Electronic Circuit Performance
Key Attributes
Model Number:
BC807-40
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC807-40
Package:
SOT-23
Product Description
Product Overview
The BC807 is a PNP type bipolar transistor in a SOT-23 plastic-encapsulated package. It is ideally suited for automatic insertion and features an epitaxial planar die construction. A complementary NPN type, the BC817, is also available.
Product Attributes
- Brand: microdiode
- Package Type: SOT-23
- Complementary NPN Type: BC817
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | IC= -10A, IE=0 | -50 | V | ||
| Collector-Emitter Voltage | VCEO | IC= -10mA,IB=0 | -45 | V | ||
| Emitter-Base Voltage | VEBO | IE= -1A,IC=0 | -5 | V | ||
| Collector Current | IC | -500 | mA | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Thermal Resistance Junction To Ambient | RJA | 417 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector Cut-off Current | ICBO | VCB= -45V, IE=0 | -0.1 | A | ||
| Emitter Cut-off Current | IEBO | VEB= -4V, IC=0 | -0.1 | A | ||
| DC Current Gain | hFE(1) | VCE= -1V, IC= -100mA | 100 | 600 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC= -500mA, IB= -50mA | -0.7 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC= -500mA, IB= -50mA | -1.2 | V | ||
| Transition Frequency | fT | VCE= -5V, IC= -10mA | 100 | MHz |
2411121102_MDD-Microdiode-Semiconductor-BC807-40_C2992933.pdf
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