N channel MOSFET Minos MPT052N10S with 4.6 Milliohm Typical Rds on and 100 Volt Drain Source Voltage
Key Attributes
Model Number:
MPT052N10S
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
120A
RDS(on):
4.6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Output Capacitance(Coss):
637pF
Pd - Power Dissipation:
173.6W
Input Capacitance(Ciss):
4.021nF
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
MPT052N10S
Package:
TO-263
Product Description
Product Description
The MPT052N10S is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is ideally suited for synchronous rectification and high-speed switching applications.
Key Characteristics
- VDS= 100V, ID= 120A
- Rds(on)<5.2m @ VGS=10V (Typ: 4.6m)
- Fast Switching
- Low On-Resistance
- Low Gate Charge
- Low Reverse Transfer Capacitances
- High Avalanche Ruggedness
- RoHS Product
Applications
- Synchronous Rectification
- High Speed Switching Applications
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Certifications: RoHS Product
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| OFF Characteristics | ||||||
| VDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 100 | -- | -- | V |
| IDSS | Drain-Source Leakage Current | VDS=100V, VGS=0V | -- | -- | 1 | A |
| IDSS | Drain-Source Leakage Current | VDS=80V, VGS=0V @TC=125C | -- | -- | 100 | A |
| IGSS(F) | Gate-Source Forward Leakage | VGS=+20V | -- | -- | 100 | nA |
| IGSS(R) | Gate-Source Reverse Leakage | VGS=-20V | -- | -- | -100 | nA |
| ON Characteristics | ||||||
| RDS(on) | Drain-Source On-Resistance | VGS=10V, ID=50A | -- | 4.6 | 5.2 | m |
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID=250A | 2 | 3 | 4 | V |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS=40V, VGS=0V, f=1MHz | -- | 4021 | -- | pF |
| Coss | Output Capacitance | -- | -- | 637 | -- | pF |
| Crss | Reverse Transfer Capacitance | -- | -- | 17 | -- | pF |
| Qg | Total Gate Charge | VDD=40V,ID=50A, VGS=10V | -- | 80 | -- | nC |
| Qgs | Gate-Source charge | -- | -- | 23 | -- | nC |
| Qgd | Gate-Drain charge | -- | -- | 24 | -- | nC |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD=40V,ID=50A, VGS=10V, RG=3, Resistive Load | -- | 22 | -- | ns |
| tr | Rise Time | -- | -- | 42 | -- | ns |
| td(off) | Turn-Off Delay Time | -- | -- | 48 | -- | ns |
| tf | Fall Time | -- | -- | 25 | -- | ns |
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Source Current | -- | -- | -- | 120 | A |
| ISM | Maximum Pulsed Current | -- | -- | -- | 480 | A |
| VSD | Diode Forward Voltage | VGS=0V, IS=50A | -- | -- | 1.2 | V |
| Trr | Reverse Recovery Time | Is=20A,VGS=0, di/dt=100A/us | -- | 60 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | -- | 136 | -- | nC |
| Absolute Ratings | ||||||
| VDSS | Drain-Source Voltage | -- | -- | -- | 100 | V |
| ID | Continuous Drain Current, Silicon Limited | -- | -- | -- | 127 | A |
| ID | Continuous Drain Current, Package Limited | -- | -- | -- | 120 | A |
| ID | Continuous Drain Current @TC=100C, Silicon Limited | -- | -- | -- | 80.7 | A |
| IDM | Pulsed Drain Current | Note1 | -- | -- | 480 | A |
| VGS | Gate-Source Voltage | -- | -- | 20 | -- | V |
| EAS | Avalanche Energy | Note2 | -- | 306 | -- | mJ |
| PD | Power Dissipation | -- | -- | -- | 173.6 | W |
| TJ, Tstg | Operating Junction and Storage Temperature Range | -- | 55 | -- | 150 | |
| TL | Maximum Temperature for Soldering | -- | -- | -- | 260 | |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-Case | -- | -- | 0.55 | -- | /W |
| RJA | Thermal Resistance, Junction-Ambient | -- | -- | 62.5 | -- | /W |
2509171410_Minos-MPT052N10S_C51933932.pdf
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