P Channel MOSFET MCC SI2333 TP featuring low gate threshold voltage and UL 94 V0 flammability rating
Key Attributes
Model Number:
SI2333-TP
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
28mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
236pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.275nF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
-
Mfr. Part #:
SI2333-TP
Package:
SOT-23
Product Description
Product Overview
The SI2333 is a P-Channel TrenchFET Power MOSFET designed for high-performance applications. It offers excellent RDS(ON), meeting UL 94 V-0 flammability rating and Moisture Sensitivity Level 1. This product is available in a lead-free finish and is RoHS compliant. It is suitable for various industrial applications requiring efficient power management.
Product Attributes
- Brand: MCC
- Type: P-Channel MOSFET
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Compliance: RoHS Compliant, Halogen Free (available with suffix "-HF")
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -12 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.40 | -1.0 | V | |
| Gate-Body Leakage Current | IGSS | VGS = 8V, VDS =0V | 0.1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-12V, VGS =0V | -1 | A | ||
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V, ID=-5.0A | 28 | m | ||
| VGS=-3.7V, ID=-4.6A | 32 | m | ||||
| VGS=-2.5V, ID=-4.3A | 40 | m | ||||
| VGS=-1.8V, ID=-1.0A | 63 | m | ||||
| VGS=-1.5V, ID=-0.5A | 150 | m | ||||
| Forward Tranconductance | gFS | VDS=-5V, ID=-5.0A | 18 | S | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=-4A | -1.4 | V | ||
| Input Capacitance | Ciss | VDS=-6V,VGS=-4.5V,ID=-4A, f=1MHz | 1275 | pF | ||
| Output Capacitance | Coss | VDS=-6V,VGS=-4.5V,ID=-4A, f=1MHz | 255 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-6V,VGS=-4.5V,ID=-4A, f=1MHz | 236 | pF | ||
| Turn-On Delay Time | td(on) | RL=6,RGEN=1, VDD=-6V,VGS=-4.5V,ID=-5A | 26 | ns | ||
| Turn-On Rise Time | tr | RL=6,RGEN=1, VDD=-6V,VGS=-4.5V,ID=-5A | 24 | ns | ||
| Turn-Off Delay Time | td(off) | RL=6,RGEN=1, VDD=-6V,VGS=-4.5V,ID=-5A | 45 | ns | ||
| Turn-Off Fall Time | tf | RL=6,RGEN=1, VDD=-6V,VGS=-4.5V,ID=-5A | 20 | ns | ||
| Total Gate Charge | Qg | VDS=-6V,VGS=-4.5V,ID=-5A | 14 | nC | ||
| Gate-Source Charge | Qgs | VDS=-6V,VGS=-4.5V,ID=-5A | 2.3 | nC | ||
| Gate-Drain Charge | Qgd | VDS=-6V,VGS=-4.5V,ID=-5A | 3.6 | nC | ||
| Diode Pulsed Forward Current | ISM | TC=25 | -1.2 | A | ||
| Diode Reverse Recovery Time | trr | IF=-4A,dI/dt=100A/s | 8 | ns | ||
| Diode Reverse Recovery Charge | Qrr | IF=-4A,dI/dt=100A/s | 24 | nC | ||
| Gate Resistance | Rg | f =1MHz | 1.9 | |||
| Maximum Continuous Drain Current | ID | -6.0 | A | |||
| Maximum Pulsed Drain Current | IDM | -20 | A | |||
| Total Power Dissipation | PD | (Note 2) | 1.10 | W | ||
| Operating Junction Temperature Range | -55 | +150 | C | |||
| Storage Temperature Range | -55 | +150 | C | |||
| Junction to Ambient Thermal Resistance | (Note 1) | 113 | C/W | |||
| Junction to Ambient Thermal Resistance | (Note 2) | 357 | C/W |
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| SI2333 | Tape&Reel: 3Kpcs/Reel | -TP |
| -TP-HF (Halogen Free) |
2008031237_MCC-SI2333-TP_C669001.pdf
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