Microdiode Semiconductor BC848A SOT23 NPN Transistor Designed for Switching and Audio Frequency Amplifier
Key Attributes
Model Number:
BC848A
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
BC848A
Package:
SOT-23
Product Description
BC846, 847, 848 SOT-23 Plastic-Encapsulate Transistor
The BC846, BC847, and BC848 are NPN transistors in a SOT-23 package, ideally suited for automatic insertion. They are designed for switching and AF amplifier applications.
Product Attributes
- Brand: Microdiode
- Package Type: SOT-23
Technical Specifications
| Model | Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| BC846 | Collector-Base Voltage | VCBO | IE=0 | 80 | V | ||
| Collector-Emitter Voltage | VCEO | IB=0 | 65 | V | |||
| Emitter-Base Voltage | VEBO | IC=0 | 6 | V | |||
| Collector Current (Continuous) | IC | 0.1 | A | ||||
| Collector Power Dissipation | PC* | Ta=25 | 200 | mW | |||
| Junction Temperature | TJ | 150 | |||||
| Storage Temperature | Tstg | -65 | 150 | ||||
| Collector-Base Breakdown Voltage | VCBO | IC=10A, IE=0 | 80 | V | |||
| Collector-Emitter Breakdown Voltage | VCEO | IC=10mA, IB=0 | 65 | V | |||
| Collector Cut-off Current | ICBO | VCB=70V, IE=0 | 0.1 | A | |||
| BC847 | Collector-Base Voltage | VCBO | IE=0 | 50 | V | ||
| Collector-Emitter Voltage | VCEO | IB=0 | 45 | V | |||
| Emitter-Base Voltage | VEBO | IC=0 | 6 | V | |||
| Collector Current (Continuous) | IC | 0.1 | A | ||||
| Collector Power Dissipation | PC* | Ta=25 | 200 | mW | |||
| Junction Temperature | TJ | 150 | |||||
| Storage Temperature | Tstg | -65 | 150 | ||||
| Collector-Base Breakdown Voltage | VCBO | IC=10A, IE=0 | 50 | V | |||
| Collector-Emitter Breakdown Voltage | VCEO | IC=10mA, IB=0 | 45 | V | |||
| Collector Cut-off Current | ICBO | VCB=50V, IE=0 | 0.1 | A | |||
| BC848 | Collector-Base Voltage | VCBO | IE=0 | 30 | V | ||
| Collector-Emitter Voltage | VCEO | IB=0 | 30 | V | |||
| Emitter-Base Voltage | VEBO | IC=0 | 6 | V | |||
| Collector Current (Continuous) | IC | 0.1 | A | ||||
| Collector Power Dissipation | PC* | Ta=25 | 200 | mW | |||
| Junction Temperature | TJ | 150 | |||||
| Storage Temperature | Tstg | -65 | 150 | ||||
| Collector-Base Breakdown Voltage | VCBO | IC=10A, IE=0 | 30 | V | |||
| Collector-Emitter Breakdown Voltage | VCEO | IC=10mA, IB=0 | 30 | V | |||
| Collector Cut-off Current | ICBO | VCB=30V, IE=0 | 0.1 | A | |||
| All Models | Emitter Cut-off Current | IEBO | VEB=5V, IC=0 | 0.1 | A | ||
| DC Current Gain | hFE | VCE=5V, IC=2mA | BC846A/847A/848A: 110-200; BC846B/847B/848B: 220-450; BC846C/847C/848C: 420-800 | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=100mA, IB=5mA | 0.5 | V | |||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=100mA, IB=5mA | 1.1 | V | |||
| Transition Frequency | fT | VCE=5V, IC=10mA, f=100MHz | 100 | MHz | |||
| Collector Output Capacitance | Cob | VCB=10V, f=1MHz | 4.5 | pF |
2511061031_MDD-Microdiode-Semiconductor-BC848A_C2858516.pdf
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