Power MOSFET Minos MPG30N10P Featuring TO 220 Package and Superior Thermal Conductivity for Switching
Key Attributes
Model Number:
MPG30N10P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
30A
RDS(on):
25mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
205pF
Pd - Power Dissipation:
70W
Input Capacitance(Ciss):
2.55nF
Output Capacitance(Coss):
225pF
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
MPG30N10P
Package:
TO-220
Product Description
Product Overview
The MPG30N10P is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Key features include a high-density cell design for ultra-low Rdson, fully characterized avalanche voltage and current, good stability and uniformity, and an excellent package for efficient heat dissipation.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Origin: Shenzhen, China (derived from contact information)
Technical Specifications
| Ordering Code | Package | Product Code | VDS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | EAS (mJ) | RJC (C/W) |
| MPG30N10-P | TO-220 | MPG30N10P | 100 | 30 | <30 | 96 | 3.5 |
| MPG30N10-S | TO-263 | MPG30N10S | 100 | 30 | <30 | 96 | 3.5 |
| MDT30N10-D | TO-252 | MDT30N10D | 100 | 30 | <30 | 96 | 3.5 |
2509171410_Minos-MPG30N10P_C51933934.pdf
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