MDD Microdiode Semiconductor BSS123 N Channel Enhancement Mode MOSFET 100V low input output leakage
Key Attributes
Model Number:
BSS123
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-40℃~+150℃
RDS(on):
3Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
32pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1.61nC@10V
Mfr. Part #:
BSS123
Package:
SOT-23
Product Description
Product Overview
The BSS123 is a 100V N-Channel Enhancement Mode MOSFET featuring Trench Power MV MOSFET technology. It acts as a voltage-controlled small signal switch with low input capacitance and fast switching speed. The device offers low input/output leakage, making it suitable for applications like small servo motor control, power MOSFET gate drivers, and general switching applications.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: Not Specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 200 | mA | |||
| Power Dissipation (Note 2) | PD | 350 | mW | |||
| Thermal Resistance from Junction to Ambient (Note 2) | RJA | 357 | /W | |||
| Junction Temperature and Storage Temperature | TJ,Tstg | -50 | 150 | |||
| Pulsed Drain Current (Note 1) | IDM | 800 | mA | |||
| Electrical Characteristics (Ta = 25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 100 | -- | -- | V |
| Gate-Source Leakage Current | IDSS | VDS=100V, VGS=0V | -- | -- | 1 | uA |
| Drain-Source Leakage Current | IGSS | VGS=20V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 1.0 | 2.5 | -- | V |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=10V, ID=200mA | -- | 5.0 | -- | |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=4.5V, ID=175mA | -- | 5.5 | -- | |
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | -- | 32 | -- | pF |
| Output Capacitance | Coss | VDS=50V, VGS=0V, f=1MHz | -- | 10 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V, VGS=0V, f=1MHz | -- | 7 | -- | pF |
| Total Gate Charge | Qg | VGS=10V,VDS=50V,ID=0.2A | -- | 1.61 | -- | nC |
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDS=50V, VGS =10V, ID=200mA, RG=6 | -- | 1.7 | -- | ns |
| Turn on Rise Time | tr | VDS=50V, VGS =10V, ID=200mA, RG=6 | -- | 9 | -- | ns |
| Turn Off Delay Time | td(off) | VDS=50V, VGS =10V, ID=200mA, RG=6 | -- | 17 | -- | ns |
| Turn Off Fall Time | tf | VDS=50V, VGS =10V, ID=200mA, RG=6 | -- | 7 | -- | ns |
| Source Drain Diode Characteristics | ||||||
| Source drain current (Body Diode) | ISD | -- | -- | 200 | mA | |
| Drain-Source Diode Forward Voltage | VSD | IS=200mA, VGS=0V | -- | 1.2 | -- | V |
2411211951_MDD-Microdiode-Semiconductor-BSS123_C427379.pdf
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