Power MOSFET MCC SI2305 TP P Channel TrenchFET with Moisture Sensitivity Level 1 and Halogen Free Design
Key Attributes
Model Number:
SI2305-TP
Product Custom Attributes
Drain To Source Voltage:
8V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
90mΩ@1.8V,2A
Gate Threshold Voltage (Vgs(th)):
550mV
Reverse Transfer Capacitance (Crss@Vds):
190pF
Number:
1 P-Channel
Input Capacitance(Ciss):
740pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
SI2305-TP
Package:
SOT-23
Product Description
Product Overview
The SI2305 is a P-Channel TrenchFET Power MOSFET designed for load switching applications in portable devices. It meets UL 94 V-0 flammability rating, is Moisture Sensitivity Level 1, and is Halogen Free and RoHS Compliant. This device offers efficient load switching with a focus on reliability and environmental considerations.
Product Attributes
- Brand: MCCSEMI
- Device Type: P-Channel MOSFET
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Environmental Compliance: Halogen Free, "Green" Device, Lead Free Finish/RoHS Compliant
- Package Type: SOT-23
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | -8 | V | |||
| VGS | Gate-Source Voltage | 8 | V | |||
| ID | Drain Current-Continuous (Note 2) | -4.1 | A | |||
| PD | Total Power Dissipation | 1.4 | W | |||
| VDS(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250A | -8 | V | ||
| VGS(th) | Gate-Threshold Voltage (Note 4) | VDS=VGS, ID=-250A | -0.55 | -0.9 | V | |
| IGSS | Gate-Body Leakage Current | VGS = 8V, VDS =0V | 0.1 | A | ||
| IDSS | Zero Gate Voltage Drain Current | VDS =-8V, VGS =0V | -1 | A | ||
| RDS(on) | Drain-Source On-Resistance (Note 2) | VGS=-4.5V, ID=-3.5A | 45 | m | ||
| RDS(on) | Drain-Source On-Resistance (Note 2) | VGS=-2.5V, ID=-3.0A | 60 | m | ||
| RDS(on) | Drain-Source On-Resistance (Note 2) | VGS=-1.8V, ID=-2.0A | 90 | m | ||
| VSD | Diode Forward Voltage (Note 4) | IF=-3.3A | -1.2 | V | ||
| Ciss | Input Capacitance (Note 3,4) | VDS=-4V,VGS=-4.5V,ID=-4.1A, f=1MHz | 740 | pF | ||
| Coss | Output Capacitance (Note 3,4) | VDS=-4V,VGS=-4.5V,ID=-4.1A, f=1MHz | 190 | pF | ||
| Crss | Reverse Transfer Capacitance (Note 3,4) | VDS=-4V,VGS=-4.5V,ID=-4.1A, f=1MHz | 53 | pF | ||
| td(on) | Turn-On Delay Time (Note 3,4) | VDD=-4V,VGEN=-4.5V,ID=-3.3A RL=1.2,RGEN=1 | 13 | ns | ||
| tr | Turn-On Rise Time (Note 3,4) | VDD=-4V,VGEN=-4.5V,ID=-3.3A RL=1.2,RGEN=1 | 35 | ns | ||
| td(off) | Turn-Off Delay Time (Note 3,4) | VDD=-4V,VGEN=-4.5V,ID=-3.3A RL=1.2,RGEN=1 | 32 | ns | ||
| tf | Turn-Off Fall Time (Note 3,4) | VDD=-4V,VGEN=-4.5V,ID=-3.3A RL=1.2,RGEN=1 | 10 | ns | ||
| Qg | Total Gate Charge (Note 3) | VDS=-4V,VGS=-4.5V,ID=-4.1A | 20 | nC | ||
| Qgs | Gate-Source Charge (Note 3) | VDS=-4V,VGS=-4.5V,ID=-4.1A | 4.5 | nC | ||
| Qgd | Gate-Drain Charge (Note 3) | VDS=-4V,VGS=-4.5V,ID=-4.1A | 1.2 | nC | ||
| Rg | Gate Resistance (Note 3,4) | VDS=-4V,VGS=0V, f=1MHz | 1.4 | |||
| IS | Diode Forward Current | -10 | A | |||
| ISM | Diode Pulsed Forward Current (Note 2) | TC=25 | -20 | A | ||
| Operating Junction Temperature Range | -55 | +150 | C | |||
| Storage Temperature Range | -55 | +150 | C | |||
| Thermal Resistance | Junction to Ambient | 90 | C/W |
Ordering Information
| Device | Packing | Part Number |
|---|---|---|
| SI2305 | Tape&Reel:3Kpcs/Reel | -TP |
2312021645_MCC-SI2305-TP_C5753828.pdf
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