Low RDS ON Power MOSFET Minos MDT18N10D for in Uninterruptible Power Supplies and Switching Circuits
Key Attributes
Model Number:
MDT18N10D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+175℃
RDS(on):
115mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
31W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
MDT18N10D
Package:
TO-252
Product Description
Product Overview
The MDT18N10D is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rds(on), fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for heat dissipation. This product is 100% UIS and 100% DVDS tested.
Product Attributes
- Brand: MNS-KX (Shenzhen Minos)
- Package: TO-252
- Certifications: 100% UIS TESTED, 100% DVDS TESTED
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 18 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 40 | A | |||
| Maximum Power Dissipation (Tc=25) | PD | 31 | W | |||
| Single pulse avalanche energy (Note 2) | EAS | 21 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 4.8 | /W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 1 | 1.8 | 2.4 | V |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=10V, ID=5A | - | 90 | 115 | mΩ |
| Forward Transconductance | gFS | VDS=25V,ID=3.6A | - | 5 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 680 | - | pF |
| Output Capacitance | Coss | - | 110 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 85 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=50V, ID=5A, VGS=10V,RGEN=2.5Ω | - | 10 | - | nS |
| Turn-on Rise Time | tr | - | 7 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 34 | - | nS | |
| Turn-Off Fall Time | tf | - | 9 | - | nS | |
| Total Gate Charge | Qg | VDS=80V,ID=3A, VGS=10V | - | 16 | - | nC |
| Gate-Source Charge | Qgs | - | 4 | - | nC | |
| Gate-Drain Charge | Qg d | - | 5 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=15A | - | - | 1.2 | V |
2410122012_Minos-MDT18N10D_C17701851.pdf
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