Loss N Channel MOSFET MDD Microdiode Semiconductor SI2302S Featuring Advanced Trench Process SOT 23
Key Attributes
Model Number:
SI2302S
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
48mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)):
600mV
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
160pF@10V
Pd - Power Dissipation:
-
Gate Charge(Qg):
5.4nC@4.5V
Mfr. Part #:
SI2302S
Package:
SOT-23
Product Description
Product Overview
The SI2302S is a high-performance N-Channel Enhancement Mode MOSFET in a SOT-23 package. It features advanced trench process technology and a high-density cell design for ultra-low on-resistance. This MOSFET is suitable for various applications requiring efficient switching and low power loss.
Product Attributes
- Brand: Microdiode
- Package Type: SOT-23
- Technology: Advanced trench process
- Cell Design: High Density
- Mode: N-Channel Enhancement Mode
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | 2.3 | A | |||
| Pulsed Drain Current | IDM | 1) | 6 | A | ||
| Maximum Power Dissipation | PD | 2) | 0.6 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | ||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250uA | 20 | V | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 2.5V, ID = 1.0A | 80 | mΩ | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 2.0A | 50 | mΩ | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID = 250uA | 0.6 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 19.5V, VGS = 0V | 1 | μA | ||
| Gate Body Leakage | IGSS | VGS = ±12V, VDS = 0V | 100 | nA | ||
| Forward Transconductance | gfs | VDS = 5V, ID = 2.3A | 10 | S | ||
| Total Gate Charge | Qg | VDS = 10V, ID = 2.3A, VGS = 4.5V | 5.4 | nC | ||
| Gate-Source Charge | Qgs | VDS = 10V, ID = 2.3A, VGS = 4.5V | 0.65 | nC | ||
| Gate-Drain Charge | Qgd | VDS = 10V, ID = 2.3A, VGS = 4.5V | 1.6 | nC | ||
| Turn-On Delay Time | td(on) | VDD = 10V, RL=5.5Ω, ID ≈ 2.3A, VGEN = 4.5V | 12 | ns | ||
| Turn-On Rise Time | tr | VDD = 10V, RL=5.5Ω, ID ≈ 2.3A, VGEN = 4.5V | 36 | ns | ||
| Turn-Off Delay Time | td(off) | VDD = 10V, RL=5.5Ω, ID ≈ 2.3A, VGEN = 4.5V | 34 | ns | ||
| Turn-Off Fall Time | tf | VDD = 10V, RL=5.5Ω, ID ≈ 2.3A, VGEN = 4.5V | 33 | ns | ||
| Input Capacitance | Ciss | VDS = 10V, VGS = 0V, f = 1.0 MHz | 340 | pF | ||
| Output Capacitance | Coss | VDS = 10V, VGS = 0V, f = 1.0 MHz | 115 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 10V, VGS = 0V, f = 1.0 MHz | 50 | pF | ||
| Diode Forward Voltage | VSD | IS = 1.0A, VGS = 0V | 1.2 | V |
2407101107_MDD-Microdiode-Semiconductor-SI2302S_C427388.pdf
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