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quality Power MOSFET MCC SI3420A TP featuring moisture sensitivity level 1 and lead free finish for industrial factory
quality Power MOSFET MCC SI3420A TP featuring moisture sensitivity level 1 and lead free finish for industrial factory

Power MOSFET MCC SI3420A TP featuring moisture sensitivity level 1 and lead free finish for industrial

Key Attributes
Model Number: SI3420A-TP
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
20mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
72pF
Number:
1 N-channel
Input Capacitance(Ciss):
515pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
SI3420A-TP
Package:
SOT-23
Product Description

Product Overview

The SI3420A is an N-channel MOSFET designed for high power and current handling capabilities. It features an epoxy construction that meets UL 94 V-0 flammability rating and is Moisture Sensitivity Level 1 compliant. This MOSFET is available in a lead-free finish and is RoHS compliant, with a halogen-free option available upon request by adding the "-HF" suffix. It is suitable for applications requiring robust power and current performance.

Product Attributes

  • Brand: MCCSEMI
  • Model: SI3420A
  • Flammability Rating: UL 94 V-0
  • Moisture Sensitivity Level: 1
  • RoHS Compliant: Yes
  • Halogen Free: Available upon request (add "-HF" suffix)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250A 20 V
Gate-Source Leakage Current IGSS VDS=0V, VGS =10V 100 nA
Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 A
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 0.5 1.0 V
Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=5A 22 28 m
Drain-Source On-Resistance RDS(on) VGS=2.5V, ID=4A 27 35 m
Diode Forward Voltage VSD VGS=0V, IS=1A 0.7 1.2 V
Forward Transconductance gFS VDS=5V, ID=6A 25 S
Input Capacitance Ciss VDS=10V,VGS=0V,f=1MHz 515 pF
Output Capacitance Coss VDS=10V,VGS=0V,f=1MHz 90 pF
Reverse Transfer Capacitance Crss VDS=10V,VGS=0V,f=1MHz 72 pF
Total Gate Charge Qg VDS=10V,VGS=10V,ID=6A 12 nC
Gate-Source Charge Qgs VDS=10V,VGS=10V,ID=6A 1 nC
Gate-Drain Charge Qg VDS=10V,VGS=10V,ID=6A 2 nC
Turn-On Delay Time td(on) VGS=10V,VDD=10V,RL=1.7, RGEN=3 3 ns
Turn-On Rise Time tr VGS=10V,VDD=10V,RL=1.7, RGEN=3 7.5 ns
Turn-Off Delay Time td(off) VGS=10V,VDD=10V,RL=1.7, RGEN=3 20 ns
Turn-Off Fall Time tf VGS=10V,VDD=10V,RL=1.7, RGEN=3 6 ns
Continuous Drain Current ID Note 1 6 A
Pulsed Drain Current IDM Note 2 30 A
Total Power Dissipation PD Note 1 1.25 W
Diode Forward Current IS Note 2 6 A
Operating Junction Temperature Range -55 150 C
Storage Temperature Range -55 150 C
Thermal Resistance RJA Note 1 100 C/W
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS 10 V

2008031237_MCC-SI3420A-TP_C669008.pdf

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