power MOSFET MDD Microdiode Semiconductor MDD2N60D 600V N Channel Enhancement Mode with low RDS
Key Attributes
Model Number:
MDD2N60D
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
2A
RDS(on):
4.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
3.4pF
Input Capacitance(Ciss):
338pF
Output Capacitance(Coss):
36pF
Pd - Power Dissipation:
35W
Gate Charge(Qg):
10.2nC@10V
Mfr. Part #:
MDD2N60D
Package:
TO-252
Product Description
Product Overview
The MDD2N60D is a 600V N-Channel Enhancement Mode MOSFET designed for various power applications. It offers low RDS(on), low gate charge, and is 100% UIS tested. This MOSFET is RoHS compliant and suitable for power factor correction, switched mode power supplies, and LED drivers.
Product Attributes
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Value | Unit | Condition |
| Drain-Source Voltage | VDS | 600 | V | |
| Gate-Source Voltage | VGS | ±30 | V | |
| Continuous Drain Current | ID | 2 | A | Tc=25 |
| RDS(on),max | RDS(on),max | 4.5 | Ω | VGS=10V |
| Qg,typ | Qg,typ | 10.2 | nC | |
| Power Dissipation | PD | 35 | W | |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | Tstg | -55 ~150 | ||
| Pulsed Drain Current | IDM | 8 | A | Note 1 |
| Avalanche Energy Single Pulsed | EAS | 80 | mJ | Note 2 |
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | Note 3 |
| Thermal resistance, Junction-to-case | RθJC | 3.57 | °C/W | TO-252 |
| Thermal resistance, Junction-to-ambient | RθJA | 62 | °C/W | TO-252 |
| Input Capacitance | Ciss | 338 | pF | VDS=25V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 36 | pF | |
| Reverse Transfer Capacitance | Crss | 3.4 | pF | |
| Total Gate Charge | Qg | 10.2 | nC | VDS=480V, VGS=10V, ID=2A (Note1,2) |
| Gate Source Charge | Qgs | 2.6 | nC | |
| Gate Drain Charge | Qgd | 4.7 | nC | |
| Turn on Delay Time | td(on) | 16.8 | ns | VDS=300V, ID=2A, RG=10Ω (Note1,2) |
| Turn on Rise Time | tr | 35.5 | ns | |
| Turn Off Delay Time | td(off) | 34.3 | ns | |
| Turn Off Fall Time | tf | 24.7 | ns | |
| Drain-Source Diode Forward Voltage | VSD | 1.3 | V | IS=2A, VGS=0V |
| Body Diode Reverse Recovery Time | trr | 194 | ns | VR=400V, IF=2A, -diF/dt =100A/µs |
| Body Diode Reverse Recovery Charge | Qrr | 0.7 | µC | |
| Drain-Source Breakdown Voltage | V(BR)DSS | 600 | V | VGS=0V, ID=250μA |
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=30V, VDS=0V |
| Drain-Source Leakage Current | IDSS | 1 | μA | VDS=600V, VGS=0V |
| Gate Threshold Voltage | VGS(TH) | 2.0 - 4.0 | V | VDS=VGS, ID=250μA |
| Drain-Source On-State Resistance | RDS(ON) | 4.5 | Ω | VGS=10V, ID=1A |
2506191136_MDD-Microdiode-Semiconductor-MDD2N60D_C45990952.pdf
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