MDD Microdiode Semiconductor MDD2305 P Channel Enhancement Mode MOSFET suitable for DC DC converters
Key Attributes
Model Number:
MDD2305
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-50℃~+150℃
RDS(on):
37mΩ@4.5V;45mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
600mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
76pF
Number:
1 P-Channel
Output Capacitance(Coss):
94pF
Input Capacitance(Ciss):
760pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
7.8nC@4.5V
Mfr. Part #:
MDD2305
Package:
SOT-23
Product Description
Product Overview
The MDD2305 is a -20V P-Channel Enhancement Mode MOSFET designed for load switching in portable devices and DC/DC converters. It offers efficient power handling with low on-resistance characteristics.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | -20 | -- | -- | V |
| Gate-Source Leakage Current | IDSS | VDS=-20V, VGS=0V | -- | -- | -1 | uA |
| Drain-Source Leakage Current | IGSS | VGS=10V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=-250A | -0.4 | -1 | -- | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-3A | -- | 37 | 48 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-2.5V, ID=-2A | -- | 45 | 60 | m |
| Input Capacitance | Ciss | VDS=-10V VGS=0V f=1MHz | -- | 760 | -- | pF |
| Output Capacitance | Coss | VDS=-10V VGS=0V f=1MHz | -- | 94 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-10V VGS=0V f=1MHz | -- | 76 | -- | pF |
| Total Gate Charge | Qg | VDS=-10V VGS=-4.5V ID=-3A | -- | 7.8 | -- | nC |
| Gate Source Charge | Qgs | VDS=-10V VGS=-4.5V ID=-3A | -- | 0.9 | -- | nC |
| Gate Drain Charge | Qgd | VDS=-10V VGS=-4.5V ID=-3A | -- | 1.8 | -- | nC |
| Turn on Delay Time | td(on) | VDS=-10V VGS =-4.5V ID=-2A RG=3.3 | -- | 5.5 | -- | ns |
| Turn on Rise Time | tr | VDS=-10V VGS =-4.5V ID=-2A RG=3.3 | -- | 3.9 | -- | ns |
| Turn Off Delay Time | td(off) | VDS=-10V VGS =-4.5V ID=-2A RG=3.3 | -- | 11.3 | -- | ns |
| Turn Off Fall Time | tf | VDS=-10V VGS =-4.5V ID=-2A RG=3.3 | -- | 36 | -- | ns |
| Source drain current(Body Diode) | ISD | -- | -- | -- | -2 | A |
| Drain-Source Diode Forward Voltage | VSD | IS=-4A, VGS=0V | -- | -0.87 | -1.2 | V |
2411211951_MDD-Microdiode-Semiconductor-MDD2305_C427392.pdf
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