Durable Power MOSFET Minos MPG100N03S with Operating Junction Temperature up to 175 Degrees Celsius
Key Attributes
Model Number:
MPG100N03S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-
RDS(on):
4.2mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
11pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.315nF@25V
Pd - Power Dissipation:
120W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
MPG100N03S
Package:
TO-263
Product Description
Product Description
The MPG100N03S is an N-Channel Power MOSFET utilizing advanced technology and design to achieve excellent RDS(ON). It is suitable for a wide variety of applications, including power switching and adapters/chargers, due to its low ON resistance and low reverse transfer capacitances. The device has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen, China
- Certifications: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| VDS | Drain-to-Source Breakdown Voltage | 30 | V | |||
| ID | Drain Current (continuous) | at Tc=25 | 100 | A | ||
| IDM | Drain Current (pulsed) | 400 | A | |||
| VGS | Gate to Source Voltage | +/-30 | V | |||
| Ptot | Total Dissipation | at Tc=25 | 120 | W | ||
| Tj Max. | Operating Junction Temperature | 175 | ||||
| EAS | Single Pulse Avalanche Energy | 700 | mJ | |||
| RDS(on) | Static Drain-to-Source on-Resistance | VGS =10V, ID=20A | 4.2 | 5.0 | m | |
| VGS(th) | Gated Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.5 | 2.0 | V |
| IDSS | Drain to Source leakage Current | VDS=30V, VGS = 0V | 1.0 | A | ||
| IGSS(F) | Gated Body Foward Leakage | VGS = +30V | 100 | nA | ||
| IGSS(R) | Gated Body Reverse Leakage | VGS = -30V | -100 | nA | ||
| Ciss | Input Capacitance | VGS =0V, VDS=25V, f=1.0MHZ | 2315 | pF | ||
| Coss | Output Capacitance | 190 | pF | |||
| Crss | Reverse Transfer Capacitance | 11 | pF | |||
| td(on) | Turn-on Delay Time | VDD=20V,ID=50A, RG=10 | 28 | nS | ||
| tr | Turn-on Rise Time | 21 | nS | |||
| td(off) | Turn-off Delay Time | 62 | nS | |||
| tf | Turn-off Fall Time | 32 | nS | |||
| Qg | Total Gate Charge | VDS=20V ID=50A VGS=10V | 40 | nC | ||
| Qgs | Gate-Source Charge | 9.2 | nC | |||
| Qgd | Gate-Drain Charge | 14 | nC | |||
| ISD | S-D Current(Body Diode) | 100 | A | |||
| ISDM | Pulsed S-D Current(Body Diode) | 400 | A | |||
| VSD | Diode Forward Voltage | VGS =0V, IDS=30A | 1.5 | V | ||
| trr | Reverse Recovery Time | TJ=25,IF=30A di/dt=100A/us | 555 | nS | ||
| Qrr | Reverse Recovery Charge | 4550 | C | |||
| RJC | Junction-to-Case | 2.5 | /W |
2410122013_Minos-MPG100N03S_C7429906.pdf
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