N Channel Power MOSFET Minos MDT60N10D with Low Gate Charge and High Thermal Dissipation Capability
Key Attributes
Model Number:
MDT60N10D
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
14.5mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
183pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.72nF
Pd - Power Dissipation:
160W
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
MDT60N10D
Package:
TO-252
Product Description
Product Overview
The MDT60N10D is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design contributes to lower Rdson, and it is fully characterized for avalanche voltage and current, ensuring good stability and uniformity with high EAS. The TO-252 package provides excellent heat dissipation.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 60 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 240 | A | |||
| Maximum Power Dissipation (Tc=25) | PD | 160 | W | |||
| Single pulse avalanche energy (Note 2) | EAS | 250 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.93 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=10V, ID=30A | 14.5 | 16.5 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | 3720 | pF | ||
| Output Capacitance | Coss | 225 | pF | |||
| Reverse Transfer Capacitance | Crss | 183 | pF | |||
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=50V, ID=30A, VGS=10V,RGEN=3 | 12 | nS | ||
| Turn-on Rise Time | tr | 9 | nS | |||
| Turn-Off Delay Time | td(off) | 20 | nS | |||
| Turn-Off Fall Time | tf | 18 | nS | |||
| Total Gate Charge | Qg | VDS=80V,ID=30A, VGS=10V | 80 | nC | ||
| Gate-Source Charge | Qgs | 23 | nC | |||
| Gate-Drain Charge | Qg | 26 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=60A | 1.2 | V | ||
2411220027_Minos-MDT60N10D_C5890265.pdf
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