MCC MCQ4407 TP P Channel Enhancement Mode Transistor with SOP 8 Epoxy Package and Halogen Free Option
Key Attributes
Model Number:
MCQ4407-TP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-
RDS(on):
17mΩ@6V,10A
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
1 P-Channel
Input Capacitance(Ciss):
2.9nF
Output Capacitance(Coss):
410pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
MCQ4407-TP
Package:
SOIC-8
Product Description
Product Overview
The MCQ4407 is a P-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features a SOP-8 Epoxy package that meets UL 94 V-0 flammability rating and Moisture Sensitivity Level 1. This transistor is available in a Halogen-free option by adding the "-HF" suffix. It is lead-free and RoHS compliant, with the "P" suffix designating RoHS compliance.
Product Attributes
- Brand: Micro Commercial Components (MCC)
- Model Series: MCQ4407
- Package Type: SOP-8 Epoxy
- Flammability Rating: UL 94 V-0
- Moisture Sensitivity Level: 1
- Compliance: Lead Free Finish/RoHS Compliant (Suffix "P"), Halogen free available (Suffix "-HF")
- Marking: Q4407, MCQ4407
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -12 | A | |||
| Pulsed Drain Current | IDM | -48 | A | |||
| Power Dissipation | PD | 1.4 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 89 | /W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Single Pulsed Avalanche Energy | EAS | VDD=-50V, L=0.5mH, RG=25, Starting TJ = 25C | 115 | mJ | ||
| Electrical Characteristics (Ta=25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS=-30V, VGS =0V | -1 | A | ||
| Gate-body leakage current | IGSS | DS V =0V, VGS =20V | 100 | nA | ||
| On Characteristics (note1) | ||||||
| Gate-threshold voltage | VGS(th) | DS V =VGS, ID =-250A | -1.0 | -1.5 | -2.2 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-12A | 7.8 | 13 | m | |
| VGS =-6.0V, ID =-10A | 9 | 17 | m | |||
| Forward transconductance | gFS | VDS =-5V, ID =-15A | 25 | S | ||
| Dynamic Characteristics (note 2) | ||||||
| Input capacitance | Ciss | VDS =-15V,VGS =0V, f =1MHz | 2900 | pF | ||
| Output capacitance | Coss | 280 | pF | |||
| Reverse transfer capacitance | Crss | pF | ||||
| Switching Characteristics (note 2) | ||||||
| Total gate charge | Qg | VDS=-15V, VGS=-10V, ID=-10A | 48 | nC | ||
| Gate-source charge | Qgs | 12 | nC | |||
| Gate-drain charge | Qgd | 14 | nC | |||
| Turn-on delay time | td(on) | VDD=-15V,VGS=-10V, RG=3, RL=1.25 | 15 | ns | ||
| Turn-on rise time | tr | 11 | ns | |||
| Turn-off delay time | td(off) | 44 | ns | |||
| Turn-off fall time | tf | 21 | ns | |||
| Gate Resistance | Rg | f =1MHz, VDS=0V, VGS=0V | 3.6 | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | GS V =0V, IS=-2A (note1) | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -15 | A | |||
| Pulsed drain-source diode forward current | ISM | -60 | A | |||
Notes:
- 1. Pulse Test: Pulse Width 300s, duty cycle 2%.
- 2. Guaranteed by design, not subject to production testing.
Device Packing: Part Number-TP (Tape&Reel: 4Kpcs/Reel)
Ordering Information: Adding "-HF" suffix for halogen free, e.g., Part Number-TP-HF.
2411220243_MCC-MCQ4407-TP_C151754.pdf
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