Enhanced silicon n channel mosfet Minos MD50N20 designed for switching and power supply applications
Product Description
The MD50N20 is a silicon N-Channel Enhanced Power MOSFET utilizing advanced MOSFET technology to reduce conduction losses, improve switching performance, and enhance avalanche energy. It is suitable for Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen, China
- Material: Silicon N-Channel Enhanced MOSFET
- Certifications: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Absolute Maximum Ratings | VDSS | 200 | V | |
| ID | 50 | A | ||
| IDM | (note2) | 200 | A | |
| VGSS | 20 | V | ||
| EAS | (note2) | 780 | mJ | |
| IAR | (note1) | 39.5 | A | |
| EAR | (note1) | 468 | mJ | |
| PD | TC = 25C | 250 | W | |
| TJ, Tstg | -55 to175 | C | ||
| RthJC | TO-247 | 0.5 | /W | |
| RthJA | TO-247 | 45 | /W | |
| Electrical Characteristics | V(BR)DSS | VGS = 0V, ID= 250A | 200 | V |
| IDSS | VDS = 200V, VGS= 0V, TJ = 25C | 1 | A | |
| IGSS | VGS = +20V,VDS=0V | 100 | nA | |
| IGSS | VGS=-20V, VDS=0V | -100 | nA | |
| VGS(th) | VDS = VGS, ID = 250A | 2.0 -- 4.0 | V | |
| RDS(on) | VGS = 10V, ID = 25A (Note3) | 30 -- 48 | m | |
| Ciss | VGS = 0V, VDS = 25V, f = 1.0MHz | 3538 | pF | |
| Coss | 657 | pF | ||
| Crss | 280 | pF | ||
| Qg | VDD =160V, ID = 25A, VGS = 0 to 10V | 244 | nC | |
| Qgs | 16 | -- | ||
| Qgd | 144 | -- | ||
| Switching Characteristics | td(on) | VDD = 100V, ID =25A, VGS= 10V, RG= 25 | 53 | ns |
| tr | 65 | ns | ||
| td(off) | 689 | ns | ||
| tf | 230 | ns | ||
| IS | TC = 25 C | 50 | A | |
| ISM | 200 | A | ||
| Body Diode Characteristics | VSD | TJ = 25C, ISD = 25A, VGS = 0V | 1.5 | V |
| trr | VGS = 0V,IS = 25A, diF/dt =100A /s | 208 | ns | |
| Qrr | 2.04 | C |
2410010301_Minos-MD50N20_C5352771.pdf
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