MDD Microdiode Semiconductor MDD2310 60V N Channel Enhancement Mode MOSFET with Surface Mount Design
Key Attributes
Model Number:
MDD2310
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-50℃~+150℃
RDS(on):
79mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
19.5pF
Number:
1 N-channel
Output Capacitance(Coss):
34pF
Input Capacitance(Ciss):
247pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
MDD2310
Package:
SOT-23
Product Description
Product Overview
The MDD2310 is a 60V N-Channel Enhancement Mode MOSFET designed for high power and current handling capabilities. It features a lead-free, surface-mount SOT-23 package, making it suitable for various electronic applications. This MOSFET offers advantages such as a compact form factor and reliable performance.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25 | 3 | A | ||
| Power Dissipation (Note 2) | PD | TA=25 | 0.35 | W | ||
| Thermal Resistance from Junction to Ambient (Note 2) | RΘJA | 357 | ℃/W | |||
| Junction Temperature and Storage Temperature | TJ,Tstg | -50 | 150 | ℃ | ||
| Pulsed Drain Current (Note 1) | IDM | 10 | A | |||
| Electrical Characteristics (TA=25unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250μA | 60 | -- | -- | V |
| Gate-Source Leakage Current | IDSS | VDS=60V, VGS=0V | -- | 1 | uA | |
| Drain-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | -- | ±100 | nA | |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250μA | 0.5 | 2 | -- | V |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=10V, ID=3A | -- | 79 | 90 | mΩ |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=4.5V, ID=2A | -- | 125 | -- | mΩ |
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=1MHz | -- | 247 | -- | pF |
| Output Capacitance | Coss | VDS=30V, VGS=0V, f=1MHz | -- | 34 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=30V, VGS=0V, f=1MHz | -- | 19.5 | -- | pF |
| Total Gate Charge | Qg | VDS=30V, VGS=4.5V, ID=3A | -- | 6 | -- | nC |
| Gate Source Charge | Qgs | VDS=30V, VGS=4.5V, ID=3A | -- | 1 | -- | nC |
| Gate Drain Charge | Qgd | VDS=30V, VGS=4.5V, ID=3A | -- | 1.3 | -- | nC |
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDS=30V, VGS =10V, ID=1.5A, RG=1Ω | -- | 6 | -- | ns |
| Turn on Rise Time | tr | VDS=30V, VGS =10V, ID=1.5A, RG=1Ω | -- | 15 | -- | ns |
| Turn Off Delay Time | td(off) | VDS=30V, VGS =10V, ID=1.5A, RG=1Ω | -- | 15 | -- | ns |
| Turn Off Fall Time | tf | VDS=30V, VGS =10V, ID=1.5A, RG=1Ω | -- | 10 | -- | ns |
2411211951_MDD-Microdiode-Semiconductor-MDD2310_C427394.pdf
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